ZXTP25012EZTA Diodes Zetex, ZXTP25012EZTA Datasheet

TRANS PNP HI GAIN 12V SOT89

ZXTP25012EZTA

Manufacturer Part Number
ZXTP25012EZTA
Description
TRANS PNP HI GAIN 12V SOT89
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXTP25012EZTA

Transistor Type
PNP
Current - Collector (ic) (max)
4.5A
Voltage - Collector Emitter Breakdown (max)
12V
Vce Saturation (max) @ Ib, Ic
285mV @ 450mA, 4.5A
Dc Current Gain (hfe) (min) @ Ic, Vce
500 @ 10mA, 2V
Power - Max
2.4W
Frequency - Transition
310MHz
Mounting Type
Surface Mount
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
ZXTP25012EZTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXTP25012EZTA
Manufacturer:
ZETEX
Quantity:
20 000
ZXTP25012EZ
20V PNP high gain transistor in SOT89
Summary
BV
h
I
V
R
P
Complementary part number ZXTN25012EZ
Description
Packaged in the SOT89 outline this new low saturation 12V PNP
transistor offers extremely low on state losses making it ideal for use
in DC-DC circuits and various driving and power management
functions.
Features
Applications
Ordering information
Device marking
Issue 1- December 2007
© Zetex Semiconductors plc 2007
C(cont)
Device
ZXTP25012EZTA
FE
D
CE(sat)
CE(sat)
CEO
4.5A continuous current
Up to 10A peak current
Very low saturation voltages
High gain
High side switch
Battery charging
Regulator circuits
Buck converters
MOSFET gate drivers
1L4
= 2.4W
> 500
> -12V
= 4.5A
< -70mV @ 1A
= 45m
Reel size
(inches)
7
Tape width
(mm)
12
1
Quantity
per reel
1000
C
B
Pinout - top view
www.zetex.com
C
E
C
B
E

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ZXTP25012EZTA Summary of contents

Page 1

... High side switch • Battery charging • Regulator circuits • Buck converters • MOSFET gate drivers Ordering information Device Reel size (inches) ZXTP25012EZTA Device marking • 1L4 Issue 1- December 2007 © Zetex Semiconductors plc 2007 Tape width Quantity (mm) per reel ...

Page 2

Absolute maximum ratings Parameter Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Continuous Collector current Base current Peak pulse current Power dissipation at T =25°C A Linear derating factor Power dissipation at T =25°C A Linear derating factor Power dissipation at T ...

Page 3

Thermal characteristics Issue 1- December 2007 © Zetex Semiconductors plc 2007 ZXTP25012EZ 3 www.zetex.com ...

Page 4

Thermal characteristics Issue 1- December 2007 © Zetex Semiconductors plc 2007 ZXTP25012EZ 4 www.zetex.com ...

Page 5

Electrical characteristics (at T Parameter Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector-Base cut-off current Emitter Base cut-off current Collector-Emitter saturation voltage Base-Emitter saturation voltage Base-Emitter turn-on voltage Static forward current transfer ratio Transition frequency Input capacitance Output ...

Page 6

Typical characteristics Issue 1- December 2007 © Zetex Semiconductors plc 2007 ZXTP25012EZ 6 www.zetex.com ...

Page 7

Package outline DIM Millimeters Min Max A 1.40 1.60 B 0.44 0.56 B1 0.36 0.48 C 0.35 0.44 D 4.40 4.60 D1 1.52 1.83 Note: Controlling dimensions are in millimeters. Approximate dimensions are provided ...

Page 8

Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The ...

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