2N5830 Fairchild Semiconductor, 2N5830 Datasheet - Page 2

• Manufacturer Part Number: 2N5830
• Description: IC TRANS NPN SS HV 200MA TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of 2N5830

• Transistor Type: NPN
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 10mA, 5V
• Power - Max: 625mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 0.2 A
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 625 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 80
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

V
V
V
I
I
OFF CHARACTERISTICS
ON CHARACTERISTICS*
h
V
V
V
C
h
h
h
h
CBO
EBO
SMALL SIGNAL CHARACTERISTICS
Symbol
(BR)CEO
(BR)CBO
(BR)EBO
FE
fe
ie
oe
fe
CE(
BE(
BE(
*
cb
Electrical Characteristics
Pulse Test: Pulse Width
sat
on
sat
)
)
)
Collector-Emitter Breakdown Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Small-Signal Current Gain
Input Impedance
Output Admittance
Small-Signal Current Gain
300 s, Duty Cycle 2.0%
Parameter
TA = 25°C unless otherwise noted
I
I
I
V
V
V
V
V
V
I
I
I
I
I
I
V
V
I
f = 100 MHz
I
f = 1.0 kHz
C
C
E
C
C
C
C
C
C
C
C
CB
CB
EB
CE
CE
CE
CE
CB
= 1.0 mA, I
= 100 A, I
= 10 A, I
= 1.0 mA, I
= 10 mA, I
= 50 mA, I
= 1.0 mA, I
= 10 mA, I
= 50 mA, I
= 10 mA, V
= 1.0 mA, V
= 100 V, I
= 100 V, I
= 4.0 V, I
= 5.0 V, I
= 5.0 V, I
= 5.0 V, I
= 5.0 V, I
= 10 V, f = 1.0 MHz
Test Conditions
C
B
B
B
B
C
B
E
C
C
C
B
B
C
= 0
CE
E
E
= 1.0 mA
= 5.0 mA
= 1.0 mA
= 5.0 mA
CE
= 0
= 0
= 0
= 1.0 mA
= 10 mA
= 50 mA
= 0.1 mA
= 0.1 mA
= 1.0 mA
= 0
= 0, T
= 10 V,
NPN General Purpose Amplifier
= 10 V,
A
= 100 C
Min
100
120
5.0
1.0
60
80
80
60
Max
0.15
0.25
500
0.2
0.8
1.0
1.0
0.8
4.0
5.0
6.0
50
25
50
40
(continued)
Units
nA
nA
K
mho
pF
V
V
V
V
V
V
V
V
V
V
A