D44H11 Fairchild Semiconductor, D44H11 Datasheet - Page 2

• Manufacturer Part Number: D44H11
• Description: TRANSISTOR NPN 80V 8A TO-220
• Manufacturer: Fairchild Semiconductor

Specifications of D44H11

• Transistor Type: NPN
• Current - Collector (ic) (max): 10A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 1V @ 400mA, 8A
• Current - Collector Cutoff (max): 10µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 4A, 1V
• Power - Max: 60W
• Frequency - Transition: 50MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 10 A
• Maximum Dc Collector Current: 10 A
• Power Dissipation: 50 W
• Maximum Operating Frequency: 50 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 60 at 2 A at 1 V
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

MJD44H11 Rev. B1
© 2009 Fairchild Semiconductor Corporation
Electrical Characteristics
* Pulse Test: PW≤300μs, Duty Cycle≤2%
V
I
I
h
V
V
f
C
t
t
t
CEO
EBO
T
ON
STG
F
FE
Symbol
CEO
CE
BE
ob
(on)
(sat)
(sus)
*Collector-Emitter Sustaining Voltage
*DC Current Gain
*Collector-Emitter Saturation Voltage
*Base-Emitter On Voltage
Collector Cut-off Current
Emitter Cut-off Current
Current Gain Bandwidth Product
Output Capacitance
Turn On Time
Storage Time
Fall Time
Parameter
T
a
= 25°C unless otherwise noted
I
2
I
V
V
V
V
I
V
V
I
I
C
C
C
C
B1
CE
BE
CE
CE
CE
CB
= 30mA, I
= 8A, I
= 8A, I
= 5A
Test Condition
= - I
= 80V, I
= 5V, I
= 1V, I
= 1V, I
= 10V, I
=10V, f = 1MHz
B2
B
B
= 0.5A
C
= 0.4A
= 0.8A
C
C
B
B
C
= 0
= 2A
= 4A
= 0
= 0
= 0.5A
Min.
80
60
40
Typ.
130
300
500
140
50
Max.
1.5
10
50
1
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Units
MHz
μA
μA
pF
ns
ns
ns
V
V
V