KSC5402DTTU Fairchild Semiconductor, KSC5402DTTU Datasheet - Page 7

• Manufacturer Part Number: KSC5402DTTU
• Description: TRANSISTOR NPN 450V 2A TO-220
• Manufacturer: Fairchild Semiconductor

Specifications of KSC5402DTTU

• Transistor Type: NPN
• Current - Collector (ic) (max): 2A
• Voltage - Collector Emitter Breakdown (max): 450V
• Vce Saturation (max) @ Ib, Ic: 750mV @ 200mA, 1A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 6 @ 1A, 1V
• Power - Max: 50W
• Frequency - Transition: 11MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

KSC5402D/KSC5402DT Rev. C0
© 2009 Fairchild Semiconductor Corporation
Typical Performance Characteristics
Figure 23. Forward Bias Safe Operating Area
0.01
450
400
350
300
250
200
150
100
160
140
120
100
Figure 19. Inductive Switching Time, t
Figure 21. Inductive Switching Time, t
0.1
50
10
80
60
40
1
0.4
10
0.4
I
V
V
L
C
C
=5I
CC
Z
=200
=300V
=15V
B1
=5I
μ
H
B2
V
0.6
0.6
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
I
DC
c
c
[A], COLLECTOR CURRENT
[A], COLLECTOR CURRENT
T
T
J
0.8
J
0.8
=25 ℃
5ms
=125 ℃
100
1ms
1.0
1.0
T
T
J
=125 ℃
J
=25 ℃
50
μ
s
10
1.2
1.2
μ
s
I
V
V
L
C
C
CC
Z
=5I
=300V
=200
1
=15V
μ
B1
s
=2I
μ
H
c
fi
B2
1000
1.4
1.4
(Continued)
7
Figure 20. Inductive Switching Time, t
200
180
160
140
120
100
1.6
1.4
1.2
1.0
0.8
0.6
Figure 22. Inductive Switching Time, t
80
60
40
30
20
10
0
0.4
0.4
0
I
V
V
L
C
C
=5I
CC
Z
=300V
=200
=15V
B1
=2I
Figure 24. Power Derating
μ
H
B2
25
0.6
0.6
I
I
T
c
c
[A], COLLECTOR CURRENT
C
[A], COLLECTOR CURRENT
[ ], CASE TEMPERATURE
℃
50
0.8
0.8
T
75
J
=25 ℃
1.0
1.0
T
T
J
T
=125 ℃
J
=25 ℃
100
J
=125 ℃
1.2
1.2
125
I
V
V
L
C
C
=5I
CC
Z
=300V
=200
www.fairchildsemi.com
=15V
B1
=2I
μ
si
H
c
B2
1.4
150
1.4