BC807-16,235 NXP Semiconductors, BC807-16,235 Datasheet - Page 7
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BC807-16,235
Manufacturer Part Number
BC807-16,235
Description
TRANSISTOR PNP 500MA 45V SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.BC807-25235.pdf
(19 pages)
Specifications of BC807-16,235
Transistor Type
PNP
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
700mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 100mA, 1V
Power - Max
250mW
Frequency - Transition
80MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
933628560235
BC807-16 /T3
BC807-16 /T3
BC807-16 /T3
BC807-16 /T3
NXP Semiconductors
BC807_BC807W_BC327_6
Product data sheet
Fig 4.
Fig 6.
V
−10
BEsat
(V)
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
−10
−1
−1
−10
I
Selection -16: Base-emitter saturation voltage
as a function of collector current; typical
values
I
Selection -40: Base-emitter saturation voltage as a function of collector current; typical values
C
C
−1
amb
amb
amb
amb
amb
amb
/I
/I
B
B
= 10
= 10
= −55 °C
= 25 °C
= 150 °C
= −55 °C
= 25 °C
= 150 °C
−1
(1)
(2)
(3)
−10
V
−10
BEsat
(V)
−10
−10
−1
−1
−10
2
−1
I
006aaa122
C
(mA)
Rev. 06 — 17 November 2009
−10
−1
3
(1)
(2)
(3)
−10
Fig 5.
V
BC807; BC807W; BC327
−10
BEsat
(V)
(1) T
(2) T
(3) T
45 V, 500 mA PNP general-purpose transistors
−10
−1
−10
−1
−10
I
Selection -25: Base-emitter saturation voltage
as a function of collector current; typical
values
2
C
−1
amb
amb
amb
I
/I
006aaa124
C
B
(mA)
= 10
= −55 °C
= 25 °C
= 150 °C
−10
−1
3
(1)
(2)
(3)
−10
−10
© NXP B.V. 2009. All rights reserved.
2
I
006aaa123
C
(mA)
−10
3
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