BC807-40W,135 NXP Semiconductors, BC807-40W,135 Datasheet - Page 8
![TRANSISTOR PNP 500MA 45V SOT-323](/photos/5/24/52427/568-umt3_sot-323_sc-70_sot323_sml.jpg)
BC807-40W,135
Manufacturer Part Number
BC807-40W,135
Description
TRANSISTOR PNP 500MA 45V SOT-323
Manufacturer
NXP Semiconductors
Datasheet
1.BC807-25235.pdf
(19 pages)
Specifications of BC807-40W,135
Transistor Type
PNP
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
700mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
250 @ 100mA, 1V
Power - Max
200mW
Frequency - Transition
80MHz
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
934024260135
BC807-40W /T3
BC807-40W /T3
BC807-40W /T3
BC807-40W /T3
NXP Semiconductors
BC807_BC807W_BC327_6
Product data sheet
Fig 7.
Fig 9.
V
CEsat
−10
−10
(V)
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
−1
−1
−2
−10
I
Selection -16: Collector-emitter saturation
voltage as a function of collector current;
typical values
I
Selection -40: Collector-emitter saturation voltage as a function of collector current; typical values
C
C
−1
amb
amb
amb
amb
amb
amb
/I
/I
B
B
= 10
= 10
= 150 °C
= 25 °C
= −55 °C
= 150 °C
= 25 °C
= −55 °C
−1
−10
(1)
(3)
(2)
V
−10
−10
−10
CEsat
(V)
−10
−1
−1
−2
−3
−10
2
−1
I
006aaa125
C
(mA)
Rev. 06 — 17 November 2009
−10
−1
3
−10
(1)
(3)
Fig 8.
(2)
V
BC807; BC807W; BC327
−10
−10
−10
CEsat
(V)
(1) T
(2) T
(3) T
45 V, 500 mA PNP general-purpose transistors
−1
−10
−1
−2
−3
−10
I
Selection- 25: Collector-emitter saturation
voltage as a function of collector current;
typical values
2
C
−1
amb
amb
amb
/I
I
006aaa127
C
B
(mA)
= 10
= 150 °C
= 25 °C
= −55 °C
−10
−1
3
−10
(1)
(3)
(2)
−10
© NXP B.V. 2009. All rights reserved.
2
I
006aaa126
C
(mA)
−10
3
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