BCW89,215 NXP Semiconductors, BCW89,215 Datasheet
BCW89,215
Specifications of BCW89,215
BCW89 T/R
BCW89 T/R
Related parts for BCW89,215
BCW89,215 Summary of contents
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DATA SHEET ook, halfpage BCW89 PNP general purpose transistor Product data sheet Supersedes data of 1997 Mar 11 DISCRETE SEMICONDUCTORS M3D088 1999 Apr 15 ...
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... NXP Semiconductors PNP general purpose transistor FEATURES • Low current (max. 100 mA) • Low voltage (max. 60 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION PNP transistor in a SOT23 plastic package. MARKING TYPE NUMBER BCW89 Note 1. ∗ Made in Hong Kong. ∗ Made in Malaysia. ...
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... NXP Semiconductors PNP general purpose transistor THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to ambient th j-a Note 1. Transistor mounted on an FR4 printed-circuit board CHARACTERISTICS = 25 °C unless otherwise specified SYMBOL PARAMETER I collector cut-off current CBO I emitter cut-off current EBO h DC current gain ...
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... NXP Semiconductors PNP general purpose transistor PACKAGE OUTLINE Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 1999 Apr scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2 ...
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... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...
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... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...