BCW32,215 NXP Semiconductors, BCW32,215 Datasheet - Page 6

• Manufacturer Part Number: BCW32,215
• Description: TRANSISTOR NPN 32V 100MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BCW32,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Power - Max: 250mW
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 32V
• Transistor Type: NPN
• Frequency - Transition: 100MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Vce Saturation (max) @ Ib, Ic: 210mV @ 2.5mA, 50mA
• Dc Collector/base Gain Hfe Min: 200 at 2 mA at 5 V
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 32 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933082791215::BCW32 T/R::BCW32 T/R

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This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
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drawings which were updated to the latest version.
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R75/05/pp6
Date of release: 2004 Feb 06
Document order number: 9397 750 12404