BCX19,235 NXP Semiconductors, BCX19,235 Datasheet - Page 3
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BCX19,235
Manufacturer Part Number
BCX19,235
Description
TRANSISTOR NPN 45V 500MA SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.BCX19235.pdf
(6 pages)
Specifications of BCX19,235
Transistor Type
NPN
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
620mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 100mA, 1V
Power - Max
250mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
933209640235
BCX19 /T3
BCX19 /T3
BCX19 /T3
BCX19 /T3
NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
Notes
1. Pulse test: t
2. V
2004 Jan 16
R
I
I
h
V
V
C
f
j
CBO
EBO
T
SYMBOL
SYMBOL
FE
= 25 °C unless otherwise specified.
CEsat
BE
NPN general purpose transistor
th(j-a)
c
BE
decreases by approximately −2 mV/°C with increasing temperature.
thermal resistance from junction to ambient note 1
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter voltage
collector capacitance
transition frequency
p
≤ 300 μs; δ ≤ 0.02.
PARAMETER
PARAMETER
I
I
I
V
I
I
I
I
E
E
C
C
C
E
C
CE
I
I
I
= 0; V
= 0; V
= 0; V
= 500 mA; I
= 500 mA; V
= I
= 10 mA; V
C
C
C
= 1 V; note 1
= 100 mA
= 300 mA
= 500 mA
e
= 0; V
CB
CB
EB
= 20 V
= 20 V; T
= 5 V
CB
CONDITIONS
CE
3
B
CE
= 10 V; f = 1 MHz
= 50 mA; note 2
= 5 V; f = 100 MHz
= 1 V; notes 1 and 2
j
CONDITIONS
= 150 °C
−
−
−
100
70
40
−
−
−
100
MIN.
VALUE
500
−
−
−
−
−
−
−
−
5
−
TYP.
Product data sheet
100
5
100
600
−
−
620
1.2
−
−
MAX.
BCX19
UNIT
K/W
nA
μA
nA
mV
V
pF
MHz
UNIT