BCP55,115 NXP Semiconductors, BCP55,115 Datasheet - Page 10
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BCP55,115
Manufacturer Part Number
BCP55,115
Description
TRANSISTOR NPN 60V 1A SOT223
Manufacturer
NXP Semiconductors
Datasheet
1.BCP55-16115.pdf
(15 pages)
Specifications of BCP55,115
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Transistor Type
NPN
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
500mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
63 @ 150mA, 2V
Power - Max
960mW
Frequency - Transition
180MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single Dual Collector
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
1 A
Power Dissipation
960 mW
Maximum Operating Frequency
180 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
933917210115
BCP55 T/R
BCP55 T/R
BCP55 T/R
BCP55 T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BCP55,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
BC637_BCP55_BCX55_7
Product data sheet
Fig 10. DC current gain as a function of collector
Fig 12. Base-emitter voltage as a function of collector
(1) T
(2) T
(3) T
V
(1) T
(2) T
(3) T
h
(V)
FE
BE
300
200
100
1.2
0.8
0.4
0
0
10
10
V
current; typical values
V
current; typical values
amb
amb
amb
amb
amb
amb
CE
CE
1
1
= 2 V
= 2 V
= 150 C
= 25 C
= 55 C
= 55 C
= 25 C
= 150 C
1
1
(1)
(2)
(3)
(1)
(2)
(3)
10
10
10
10
2
2
10
10
006aaa080
006aaa081
3
3
I
I
C
C
(mA)
(mA)
10
10
Rev. 07 — 25 June 2007
4
4
Fig 11. Collector current as a function of
Fig 13. Collector-emitter saturation voltage as a
V
(1) T
(2) T
(3) T
CEsat
(A)
(V)
I
10
10
C
1.6
1.2
0.8
0.4
BC637; BCP55; BCX55
0
1
1
2
10
T
collector-emitter voltage; typical values
I
function of collector current; typical values
C
0
amb
amb
amb
amb
/I
1
B
60 V, 1 A NPN medium power transistors
= 10
= 25 C
= 150 C
= 25 C
= 55 C
I
B
0.4
(mA) = 50
1
0.8
10
45
(1)
(2)
40
10
1.2
(3)
2
35
30
© NXP B.V. 2007. All rights reserved.
10
1.6
006aaa082
006aaa084
3
V
I
C
CE
(mA)
(V)
25
20
15
10
5
10
2.0
4
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