BCX51,115 NXP Semiconductors, BCX51,115 Datasheet - Page 5

• Manufacturer Part Number: BCX51,115
• Description: TRANSISTOR PNP 45V 1A SOT89
• Manufacturer: NXP Semiconductors

Specifications of BCX51,115

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Mounting Type: Surface Mount
• Power - Max: 1.3W
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 45V
• Transistor Type: PNP
• Frequency - Transition: 145MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 63 @ 150mA, 2V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Dc Collector/base Gain Hfe Min: 63 at 5 mA at 2 V
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Collector
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 1300 mW
• Maximum Operating Frequency: 145 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933272280115::BCX51 T/R::BCX51 T/R

NXP Semiconductors
BC636_BCP51_BCX51_8
Product data sheet
Fig 1. Power derating curve SOT54
Fig 3. Power derating curves SOT89
P
(W)
(1) FR4 PCB, mounting pad for collector 6 cm
(2) FR4 PCB, mounting pad for collector 1 cm
(3) FR4 PCB, standard footprint
tot
1.6
1.2
0.8
0.4
0
FR4 PCB, standard footprint
75
25
0
25
75
P
(W)
tot
1.6
1.2
0.8
0.4
0
75
125
T
006aaa219
amb
2
2
( C)
Rev. 08 — 22 February 2008
25
175
(1)
(2)
(3)
0
25
Fig 2. Power derating curves SOT223
75
(1) FR4 PCB, mounting pad for collector 1 cm
(2) FR4 PCB, standard footprint
P
(W)
tot
1.6
1.2
0.8
0.4
BC636; BCP51; BCX51
0
75
125
T
006aaa221
amb
45 V, 1 A PNP medium power transistors
( C)
25
175
(1)
(2)
0
25
75
© NXP B.V. 2008. All rights reserved.
125
T
006aaa220
amb
2
( C)
175
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