BCP68,115 NXP Semiconductors, BCP68,115 Datasheet - Page 9

• Manufacturer Part Number: BCP68,115
• Description: TRANSISTOR NPN 20V 1A SOT223
• Manufacturer: NXP Semiconductors

Specifications of BCP68,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Mounting Type: Surface Mount
• Power - Max: 1.4W
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 20V
• Transistor Type: NPN
• Frequency - Transition: 170MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 85 @ 500mA, 1V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 100mA, 1A
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Collector
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 20 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 2 A
• Power Dissipation: 1400 mW
• Maximum Operating Frequency: 170 MHz
• Maximum Operating Temperature: + 150 C
• Number Of Elements: 1
• Collector-emitter Voltage: 20V
• Collector-base Voltage: 32V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 2A
• Dc Current Gain (min): 50
• Frequency (max): 170MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933968660115::BCP68 T/R::BCP68 T/R

NXP Semiconductors
2003 Nov 25
NPN medium power transistor;
20 V, 1 A
(1) δ = 1.0.
(2) δ = 0.75.
Fig.8
R
(K/W)
th(j-a)
10
10
10
−1
1
2
10
−5
Transient thermal resistance from junction to ambient as a function of pulse time for 6 cm
mounting pad.
(10)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(3) δ = 0.5.
(4) δ = 0.33.
10
−4
10
−3
(5) δ = 0.2.
(6) δ = 0.1.
10
−2
(7) δ = 0.05.
(8) δ = 0.02.
10
9
−1
(9) δ = 0.01.
(10) δ = 0.0.
1
10
P
t
p
10
T
2
Product data sheet
2
δ
t
p
=
collector
(s)
mdb847
t
T
p
t
BCP68
10
3