BSP61,115 NXP Semiconductors, BSP61,115 Datasheet - Page 4

• Manufacturer Part Number: BSP61,115
• Description: TRANS PNP 80V 500MA SOT223
• Manufacturer: NXP Semiconductors

Specifications of BSP61,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Mounting Type: Surface Mount
• Power - Max: 1.25W
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 60V
• Transistor Type: PNP - Darlington
• Current - Collector Cutoff (max): 50nA
• Frequency - Transition: 200MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 2000 @ 500mA, 10V
• Vce Saturation (max) @ Ib, Ic: 1.3V @ 500µA, 500mA
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Collector- Base Voltage Vcbo: 80 V
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 1.25 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: - 1 A
• Dc Collector/base Gain Hfe Min: 1000
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 933986360115::BSP61 T/R::BSP61 T/R

NXP Semiconductors
2001 May 31
handbook, full pagewidth
PNP Darlington transistors
handbook, full pagewidth
V
V
R1 = 56 Ω; R2 = 10 kΩ; R
V
Oscilloscope: input impedance Z
CE
i
BB
= −10 V; T = 200 μs; t
h FE
= 1.8 V; V
= −10 V.
6000
5000
4000
3000
2000
1000
−10
0
−1
CC
= −10.7 V.
p
= 6 μs; t
B
= 10 kΩ; R
i
= 50 Ω.
r
= t
f
C
≤ 3 ns.
oscilloscope
= 18 Ω.
−1
V i
Fig.2 DC current gain; typical values.
Fig.3 Test circuit for switching times.
(probe)
450 Ω
R1
R2
R B
V BB
4
−10
R C
V CC
DUT
V o
MGD624
(probe)
450 Ω
BSP60; BSP61; BSP62
oscilloscope
−10
2
I C (mA)
Product data sheet
MGD839
−10
3