BSP50,115 NXP Semiconductors, BSP50,115 Datasheet - Page 2

• Manufacturer Part Number: BSP50,115
• Description: TRANS NPN 80V 1000MA SOT223
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of BSP50,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 1.3V @ 500µA, 500mA
• Current - Collector Cutoff (max): 50nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 2000 @ 500mA, 10V
• Power - Max: 1.25W
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Configuration: Single Dual Collector
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Collector- Base Voltage Vcbo: 60 V
• Maximum Dc Collector Current: 1 A
• Maximum Collector Cut-off Current: 0.05 uA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 45V
• Collector-base Voltage: 60V
• Emitter-base Voltage: 5V
• Base-emitter Saturation Voltage (max): 1.9V
• Collector-emitter Saturation Voltage: 1.3V
• Collector Current (dc) (max): 1A
• Dc Current Gain: 1000
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 933986330115; BSP50 T/R; BSP50 T/R

NXP Semiconductors
FEATURES
• High current (max. 1 A)
• Low voltage (max. 80 V)
• Integrated diode and resistor.
APPLICATIONS
• Industrial high gain amplification.
DESCRIPTION
NPN Darlington transistor in a SOT223 plastic package.
PNP complements: BSP60, BSP61 and BSP62.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
1999 Apr 23
V
V
V
I
I
I
P
T
T
T
C
CM
B
SYMBOL
stg
j
amb
CBO
CES
EBO
tot
NPN Darlington transistors
For other mounting conditions, see “Thermal considerations for the SOT223 in the General Part of associated
Handbook”.
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
operating ambient temperature
BSP50
BSP51
BSP52
BSP50
BSP51
BSP52
PARAMETER
2
PINNING
open emitter
V
open collector
T
amb
BE
Top view
PIN
2,4
CONDITIONS
Fig.1 Simplified outline (SOT223) and symbol.
1
3
= 0
≤ 25 °C; note 1 −
1
base
collector
emitter
2
4
BSP50; BSP51; BSP52
3
MAM265
−
−
−
−
−
−
−
−
−
−
−65
−
−65
MIN.
DESCRIPTION
1
60
80
90
45
60
80
5
1
2
100
1.25
+150
150
+150
Product data sheet
MAX.
3
V
V
V
V
V
V
V
A
A
mA
W
°C
°C
°C
2
.
UNIT
2, 4