STBV42 STMicroelectronics, STBV42 Datasheet
STBV42
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STBV42 Summary of contents
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... Epitaxial Planar technology for switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STBV42 is designed for use in compact fluorescent lamp application. ABSOLUTE MAXIMUM RATINGS Symbol Parameter V Collector-Emitter Voltage (V ...
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... STBV42 THERMAL DATA R Thermal Resistance Junction-ambient thj-amb ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CEV Current (V = -1.5V Emitter Cut-off EBO Current ( Collector-Emitter CEO(sus) Sustaining Voltage ( Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter BE(sat) Saturation Voltage h DC Current Gain FE INDUCTIVE LOAD t Fall Time f Pulsed: Pulse duration = 300 s, duty cycle = 1.5 % ...
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... DC Current Gain Collector Emitter Saturation Voltage Switching Time Inductive Load DC Current Gain Base Emitter Saturation Voltage STBV42 3/5 ...
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... STBV42 DIM. MIN. A 4.58 B 4.45 C 3 0.4 G 0.35 4/5 TO-92 MECHANICAL DATA mm TYP. MAX. 5.33 5.2 4.2 1.27 0.51 inch MIN. TYP. MAX. 0.180 0.210 0.175 0.204 0.126 0.165 0.500 0.050 0.016 0.020 0.14 ...
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