STBV45 STMicroelectronics, STBV45 Datasheet - Page 3

• Manufacturer Part Number: STBV45
• Description: TRANSISTOR PWR NPN FAST HV TO-92
• Manufacturer: STMicroelectronics

Specifications of STBV45

• Transistor Type: NPN
• Current - Collector (ic) (max): 750mA
• Voltage - Collector Emitter Breakdown (max): 400V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 135mA, 400mA
• Current - Collector Cutoff (max): 250µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 5 @ 400mA, 5V
• Power - Max: 950mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -

STBV45
2
2.1
Electrical characteristics
(T
Table 4.
1. Pulsed duration = 300 µs, duty cycle ≤ 1.5%
Electrical characteristics (curves)
Figure 2.
V
V
V
Symbol
case
CE(sat)
BE(sat)
CEO(sus)
I
I
h
EBO
CES
(1)
FE
t
f
= 25 °C; unless otherwise specified)
(1)
(1)
Collector cut-off current
(V
Emitter cut-off current
(I
Collector-emitter sustaining
voltage (I
Collector-emitter saturation
voltage
Base-emitter saturation
voltage
DC current gain
Inductive load
Fall time
Electrical characteristics
C
Safe operating area
BE
= 0)
= 0)
Parameter
B
= 0)
V
V
I
I
I
I
I
I
I
I
I
I
I
L = 3 mH
C
C
C
C
C
C
C
C
C
C
B1
CE
EB
= 1 mA
= 0.2 A
= 0.3 A
= 0.4 A
= 0.2 A
= 0.3 A
= 0.5 mA
= 0.2 A
= 0.4 A
= 0.2 A
= -I
= 700 V
= 9 V
B2
Figure 3.
Test conditions
= 40 mA
_
V
CE
I
I
V
V
V
I
I
I
B
B
B
B
B
Figure 8.
CE
CE
clamp
= 40 mA
= 75 mA
= 135 mA
= 40 mA
= 75 mA
= 5 V
= 2 V
= 5 V
Derating curve
= 300 V
Electrical characteristics
Min. Typ. Max. Unit
400
12
10
5
0.2
0.3
0.4
0.3
250
0.5
1.5
1.2
30
20
1
1
1
mA
µA
3/10
µs
V
V
V
V
V
V