BCP56-16 STMicroelectronics, BCP56-16 Datasheet - Page 4
![TRANS NPN LOW POWER SOT-223](/photos/5/48/54884/sot-223_sml.jpg)
BCP56-16
Manufacturer Part Number
BCP56-16
Description
TRANS NPN LOW POWER SOT-223
Manufacturer
STMicroelectronics
Datasheet
1.BCP56-16.pdf
(9 pages)
Specifications of BCP56-16
Transistor Type
NPN
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
500mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 150mA, 2V
Power - Max
1.6W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Configuration
Single Dual Collector
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
80 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
1 A
Maximum Dc Collector Current
1 A
Power Dissipation
1600 mW
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
40
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-6962-2
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Electrical characteristics
2
4/9
(T
Table 3.
Note (2) Pulsed duration = 300 µs, duty cycle ≤1.5%
V
Electrical characteristics
V
V
V
case
V
(BR)CEO
Symbol
CE(sat)
BE(on)
h
(BR)CBO
(BR)EBO
I
FE
CBO
= 25°C unless otherwise specified)
(2)
(2)
(2)
(2)
Electrical characteristics
Collector cut-off current
(I
Collector-emitter
breakdown voltage
(I
Collector-base
breakdown voltage
(I
Emitter-base breakdown
voltage (I
Collector-emitter
saturation voltage
Base-emitter on voltage
DC current gain
E
B
E
=0)
=0)
=0)
Parameter
C
=0)
V
V
I
I
I
I
I
I
I
I
C
C
E
C
C
C
C
C
CB
CB
= 20mA
= 100µA
= 10µA
= 500mA
= 500mA
= 5mA
= 150mA
= 500mA
= 30V
= 30V;
Test Conditions
T
I
V
V
V
V
j
B
= 125°C
CE
CE
CE
CE
= 50mA
= 2V
= 2V
= 2V
= 2V
Min.
100
100
80
40
25
5
Typ.
Max.
100
250
0.5
10
1
BCP56-16
Unit
µA
nA
V
V
V
V
V