MJD31CT4 STMicroelectronics, MJD31CT4 Datasheet - Page 2

• Manufacturer Part Number: MJD31CT4
• Description: TRANSISTOR NPN 100V 3A DPAK
• Manufacturer: STMicroelectronics
• Type: Amplifier, Powerr

Specifications of MJD31CT4

• Transistor Type: NPN
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 1.2V @ 375mA, 3A
• Current - Collector Cutoff (max): 50µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10 @ 3A, 4V
• Power - Max: 15W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 3 A
• Power Dissipation: 15 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 3 A
• Dc Collector/base Gain Hfe Min: 20
• Current, Collector: 3 A
• Current, Gain: 50
• Package Type: TO-252
• Polarity: NPN
• Primary Type: Si
• Voltage, Breakdown, Collector To Emitter: 100 V
• Voltage, Collector To Base: 100 V
• Voltage, Collector To Emitter: 100 V
• Voltage, Collector To Emitter, Saturation: 1.2 V
• Voltage, Emitter To Base: 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-2484-2

Electrical ratings
1
2/9
Electrical ratings
Table 1.
Symbol
V
V
V
P
T
I
CBO
CEO
EBO
T
CM
TOT
I
I
stg
C
B
J
Collector-base voltage (I
Collector-base voltage (I
Emitter-base voltage (I
Collector current
Collector peak current
Base current
Total dissipation at T
Storage temperature
Max. operating junction temperature
Absolute maximum rating
Parameter
c
= 25°C
C
E
B
= 0)
= 0)
= 0)
-65 to 150
Value
100
100
150
15
5
3
5
1
MJD31CT4
Unit
°C
°C
W
A
A
A
V
V
V