2SB772 STMicroelectronics, 2SB772 Datasheet - Page 3

• Manufacturer Part Number: 2SB772
• Description: TRANSISTOR PNP MED PWR SOT32
• Manufacturer: STMicroelectronics
• Type: Power, Switchr

Specifications of 2SB772

• Transistor Type: PNP
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 1.1V @ 150mA, 3A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 2V
• Power - Max: 12.5W
• Frequency - Transition: 100MHz
• Mounting Type: Through Hole
• Package / Case: TO-126-3
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 3 A
• Power Dissipation: 12500 mW
• Dc Collector/base Gain Hfe Min: 100
• Maximum Operating Frequency: 100 MHz
• Current, Collector: -3 A
• Current, Gain: 30
• Frequency: 100 MHz
• Package Type: SOT-32
• Polarity: PNP
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 10 °C/W
• Voltage, Breakdown, Collector To Emitter: -30 V
• Voltage, Collector To Base: -60 V
• Voltage, Collector To Emitter: -30 V
• Voltage, Collector To Emitter, Saturation: -1.1 V
• Voltage, Emitter To Base: -5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4829-5

2SB772
2
Electrical characteristics
(T
Table 4.
1. Pulsed duration = 300 ms, duty cycle ≤ 1.5%.
V
V
V
Symbol
V
V
CASE
(BR)CEO
(BR)CBO
(BR)EBO
I
CE(sat)
BE(sat)
I
I
h
CEO
EBO
CES
(1)
(1)
(1)
f
FE
T
= 25°C; unless otherwise specified)
Collector cut-off current
(V
Collector cut-off current
(I
Emitter cut-off current
(I
Collector-emitter breakdown
voltage
(I
Collector-base breakdown
voltage
(I
Emitter-base breakdown
voltage
(I
Collector-emitter saturation
voltage
Base-emitter saturation
voltage
DC current gain
Transition frequency
B
C
B
E
C
BE
Electrical characteristics
= 0)
= 0)
= 0 )
= 0 )
= 0 )
= 0)
Parameter
V
V
V
I
I
I
I
I
I
I
I
I
I
I
C
C
E
C
C
C
C
C
C
C
C
CE
CE
EB
= -100 µA
= -1 A
= -2 A
= -3 A
= -2 A
= -100 mA
= -1 A
= -3 A
= -10 mA
= -100 µA
= -0.1
= -60 V
= -30 V
= -5 V
Test conditions
I
I
I
B
B
B
V
I
B
V
V
V
CE
= -100 mA
= -150 mA
= -100 mA
= -50 mA
CE
CE
CE
= -10 V
= -2 V
= -2 V
= -2 V
2 Electrical characteristics
Min.
100
-30
-60
80
30
-5
Typ.
100
Max.
-100
-0.4
-0.7
-1.1
-1.2
300
-10
-10
MHz
Unit
µA
µA
µA
V
V
V
V
V
V
V
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