2SB772 STMicroelectronics, 2SB772 Datasheet - Page 4

• Manufacturer Part Number: 2SB772
• Description: TRANSISTOR PNP MED PWR SOT32
• Manufacturer: STMicroelectronics
• Type: Power, Switchr

Specifications of 2SB772

• Transistor Type: PNP
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 1.1V @ 150mA, 3A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 2V
• Power - Max: 12.5W
• Frequency - Transition: 100MHz
• Mounting Type: Through Hole
• Package / Case: TO-126-3
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 3 A
• Power Dissipation: 12500 mW
• Dc Collector/base Gain Hfe Min: 100
• Maximum Operating Frequency: 100 MHz
• Current, Collector: -3 A
• Current, Gain: 30
• Frequency: 100 MHz
• Package Type: SOT-32
• Polarity: PNP
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 10 °C/W
• Voltage, Breakdown, Collector To Emitter: -30 V
• Voltage, Collector To Base: -60 V
• Voltage, Collector To Emitter: -30 V
• Voltage, Collector To Emitter, Saturation: -1.1 V
• Voltage, Emitter To Base: -5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4829-5

2 Electrical characteristics
2.1
4/8
Figure 2.
Figure 4.
Typical characteristics (curves)
Reverse biased safe operating area Figure 3.
Collector-emitter saturation voltage Figure 5.
DC current gain
Base-emitter saturation voltage
2SB772