MJD117T4 STMicroelectronics, MJD117T4 Datasheet - Page 2

• Manufacturer Part Number: MJD117T4
• Description: TRANS PWR DARL SILICON D-PAK
• Manufacturer: STMicroelectronics

Specifications of MJD117T4

• Transistor Type: PNP - Darlington
• Current - Collector (ic) (max): 2A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 3V @ 40mA, 4A
• Current - Collector Cutoff (max): 20µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 1000 @ 2A, 3V
• Power - Max: 20W
• Frequency - Transition: 25MHz
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6464-2; MJD117T4ST

1
Note:
2/10
Absolute maximum ratings
Table 2.
For PNP types voltage and current values are negative.
Table 3.
Symbol
R
Symbol
thJC
V
V
V
P
T
I
CBO
CEO
EBO
STG
T
I
CM
TOT
I
C
B
J
Thermal resistance junction-case max.
Absolute maximum ratings
Thermal data
Collector-base voltage (I
Collector-emitter voltage (I
Emitter-base voltage (I
Collector current
Collector peak current
Base current
Total dissipation at T
Storage temperature
Max. operating junction temperature
Parameter
Doc ID 3540 Rev 3
case
C
Parameter
E
= 0)
= 25 °C
= 0)
B
= 0)
Value
6.25
-65 to 150
Value
0.05
100
150
20
5
2
4
°C/W
Unit
Unit
°C
°C
W
V
V
A
A
A