MJD45H11T4 STMicroelectronics, MJD45H11T4 Datasheet - Page 3

• Manufacturer Part Number: MJD45H11T4
• Description: TRANSISTOR PNP 8A 80V D-PAK
• Manufacturer: STMicroelectronics

Specifications of MJD45H11T4

• Transistor Type: PNP
• Current - Collector (ic) (max): 8A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 1V @ 400mA, 8A
• Current - Collector Cutoff (max): 10µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 4A, 1V
• Power - Max: 20W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Other names: 497-6466-2; MJD45H11T4ST

2
Note:
2.1
Electrical characteristics
T
Table 4.
1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %.
For PNP types voltage and current values are negative.
Typical characteristic (curves)
Figure 2.
V
case
V
V
CEO(sus)
Symbol
CE(sat)
BE(sat)
h
I
I
CES
EBO
FE
= 25 °C; unless otherwise specified.
(1)
(1)
(1)
(1)
Electrical characteristics
Safe operating area
Collector-emitter
sustaining voltage (I
Collector cut-off current
(V
Emitter cut-off current
(I
Collector-emitter saturation
voltage
Base-emitter saturation
voltage
DC current gain
C
BE
= 0)
= 0)
Parameter
Doc ID 16095 Rev 1
B
= 0)
I
V
V
I
I
I
I
C
C
C
C
C
CE
EB
= 8 A
= 8 A
= 2
= 4
= 30 mA
= 5 V
= 80 V
Test conditions
A_
A_ _
Figure 3.
V
V
I
I
B
B
CE
CE
= 0.4 A
= 0.8 A
= 1 V
= 1 V
Derating curves
Min.
80
60
40
Typ.
-
-
-
-
-
-
-
Max.
1.5
10
50
1
Unit
µA
µA
V
V
V
3/8