BUL49DFP STMicroelectronics, BUL49DFP Datasheet - Page 4

• Manufacturer Part Number: BUL49DFP
• Description: TRANS NPN HV FAST 400V TO-220FP
• Manufacturer: STMicroelectronics

Specifications of BUL49DFP

• Transistor Type: NPN
• Current - Collector (ic) (max): 5A
• Voltage - Collector Emitter Breakdown (max): 450V
• Vce Saturation (max) @ Ib, Ic: 1.2V @ 800mA, 4A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 4 @ 7A, 10V
• Power - Max: 34W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -

Electrical characteristics
2
4/15
Electrical characteristics
(T
Table 4.
1. Pulsed duration = 300 ms, duty cycle ≤ 1.5%
V
V
V
case
V
CEO(sus)
V
Symbol
CE(sat)
BE(sat)
h
(BR)EBO
CEW
I
I
FE
CES
EBO
V
t
t
t
t
s
s
f
f
F
= 25°C unless otherwise specified)
(1)
(1)
(1)
(1)
(1)
Electrical characteristics
Collector cut-off current
(V
Emitter cut-off current
(I
Emitter-base brakdown
voltage (I
Collector-emitter
sustaining voltage (I
Collector-emitter
saturation voltage
Base-emitter saturation
voltage
DC current gain
Maximum collector-
emitter voltage without
snubber
Resistive load
Storage time
Fall time
Inductive load
Storage time
Fall time
Diode forward voltage
C
BE
=0)
=0)
Parameter
C
= 0)
B
= 0)
V
V
V
I
I
I
I
I
I
I
I
I
I
I
L =50 µH
t
V
I
(see
V
I
V
(see
I
E
C
C
C
C
C
C
C
C
C
C
p
B1
B(on)
C
CE
CE
EB
CC
CL
BE(off)
=10 µs
=10 mA
=10 mA
=1 A
=2 A
=4 A
=1 A
=4 A
=10 mA
=500 mA
=7 A
=8 A
= 3 A
=-I
=300 V
= 850 V
= 850 V
= 9 V
=250 V
Figure
Figure
Test conditions
B2
=800 mA
=-5 V
=400 mA
__ _
_
_ _
_
_
12)
13)
T
V
c
_
_
_
V
R
BB
= 125 °C
V
V
I
I
I
I
I
CE
BB(off)
L =1 mH
B
B
B
B
B
= -2.5 V
CE
CE
R
I
I
=0.2 A
=0.4 A
=0.8 A
=0.2 A
=0.8 A
C
C
=10 V
BB
=5 V
=5 V
=2 A
=4 A
=0
=0
Min.
450
450
10
10
4
2
BUL49D - BULB49D
Typ.
0.1
0.6
50
Max.
100
500
100
100
0.3
0.6
1.2
1.3
0.8
1.3
1.5
18
60
10
1
3
Unit
µA
µA
µA
µs
µs
µs
ns
V
V
V
V
V
V
V
V
V