2N6039 STMicroelectronics, 2N6039 Datasheet - Page 3

• Manufacturer Part Number: 2N6039
• Description: TRANS DARL NPN 80V 4A SOT-32
• Manufacturer: STMicroelectronics

Specifications of 2N6039

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 4A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 3V @ 40mA, 4A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 750 @ 2A, 3V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: TO-126-3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 5 V
• Collector- Base Voltage Vcbo: 80 V
• Maximum Dc Collector Current: 4 A
• Maximum Collector Cut-off Current: 100 uA
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100
• Collector Emitter Voltage V(br)ceo: 80V
• Power Dissipation Pd: 40W
• Dc Collector Current: 4A
• Dc Current Gain Hfe: 750
• No. Of Pins: 3
• Collector Current @ Hfe: 4A
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-2560-5

2
Note:
Electrical characteristics
(T
Table 3.
1. Pulsed duration = 300 µs, duty cycle 1.5%.
For PNP types voltage and current values are negative.
V
V
V
case
CEO(sus)
Symbol
V
CE(sat)
BE(sat)
h
C
I
I
I
I
BE(on)
CEV
CBO
CEO
EBO
FE
h
CBO
fe
= 25 °C; unless otherwise specified)
(1)
(1)
(1)
(1)
Electrical characteristics
Collector cut-off current
(V
Collector cut-off current
(I
Collector cut-off current
(I
Emitter cut-off current
(I
Collector-emitter
sustaining voltage
Collector-emitter saturation
voltage
Base-emitter saturation
voltage
Base-emitter on voltage
DC current gain
Small signal current gain
Collector base capacitance
(I
E
B
C
E
BE
= 0)
= 0)
= 0)
= 0)
= -1.5 V)
Parameter
Doc ID 5064 Rev 5
V
V
V
V
V
I
I
I
I
I
I
I
I
I
f = 1 MHz
V
for 2N6036
for 2N6039
C
C
C
C
C
C
C
C
C
CE
CE
CB
CE
EB
CB
= 0.75
= 2 A
= 4 A
= 4 A
= 2 A
= 0.5
= 2
= 4
= 100 mA
= 5 V
= 80 V
= 80 V, T
= 80 V
= 80 V
= 10 V
Test conditions
A_
A_ _
A_ _
A_
c
f = 0.1 MHz
V
= 125 °C
I
I
V
V
V
I
V
B
B
CE
B
CE
CE
CE
CE
= 40 mA
= 40 mA
= 8 mA
= 10 V
= 3 V
= 3 V
= 3 V
= 3 V
Min.
500
750
100
80
25
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
15000
Max.
100
200
0.1
0.5
0.1
0.1
2.8
2
2
3
4
Unit
mA
mA
mA
mA
mA
pF
pF
3/10
V
V
V
V