BUTW92 STMicroelectronics, BUTW92 Datasheet

TRANSISTOR POWER NPN TO-247

BUTW92

Manufacturer Part Number
BUTW92
Description
TRANSISTOR POWER NPN TO-247
Manufacturer
STMicroelectronics
Datasheet

Specifications of BUTW92

Transistor Type
NPN
Current - Collector (ic) (max)
60A
Voltage - Collector Emitter Breakdown (max)
250V
Vce Saturation (max) @ Ib, Ic
1V @ 15A, 60A
Current - Collector Cutoff (max)
50µA
Dc Current Gain (hfe) (min) @ Ic, Vce
9 @ 60A, 3V
Power - Max
180W
Mounting Type
Through Hole
Package / Case
TO-247-3
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
250V
Power Dissipation Pd
180W
Dc Collector Current
60A
Dc Current Gain Hfe
9
Transistor Case Style
TO-247
No. Of Pins
3
Svhc
No SVHC
Rohs Compliant
Yes
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
250 V
Emitter- Base Voltage Vebo
7 V
Power Dissipation
180 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
60 A
Dc Collector/base Gain Hfe Min
9
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BUTW92
Manufacturer:
STMicroelectronics
Quantity:
135
APPLICATIONS:
DESCRIPTION
High current, high speed transistor suited for
power conversion applications, high efficency
converters and motor controls.
ABSOLUTE MAXIMUM RATINGS
September 2001
Symbol
STMicroelectronics PREFERRED
SALESTYPE
NPN TRANSISTOR
MOTOR CONTROL
HIGH FREQUENCY AND EFFICIENCY
CONVERTERS
V
V
V
T
P
I
I
CES
CEO
EBO
I
EM
I
BM
T
stg
E
B
tot
j
Collector-Emitter Voltage (V
Collector-Emitter Voltage (I
Emitter-Base Voltage (I
Emitter-Current
Emitter Peak Current (t
Base Current
Base Peak Current (t
Total Dissipation at T
Storage Temperature
Max. Operating Junction Temperature
®
HIGH CURRENT NPN SILICON TRANSISTOR
Parameter
p
c
< 5ms)
p
C
< 5ms)
25
= 0)
B
BE
o
C
= 0)
= 0)
INTERNAL SCHEMATIC DIAGRAM
-65 to 150
Value
500
250
180
150
60
70
15
18
TO-247
7
1
BUTW92
2
3
Unit
o
o
W
V
V
V
A
A
A
A
C
C
1/4

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BUTW92 Summary of contents

Page 1

... Emitter Peak Current ( Base Current B I Base Peak Current ( Total Dissipation at T tot T Storage Temperature stg T Max. Operating Junction Temperature j September 2001 INTERNAL SCHEMATIC DIAGRAM = < 5ms) p < 5ms BUTW92 TO-247 Value Unit 500 V 250 180 W o -65 to 150 C o 150 C 1/4 ...

Page 2

... BUTW92 THERMAL DATA R Thermal Resistance Junction-case thj-case ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CES Current (V = -1.5V Emitter Cut-off Current EBO ( Collector-Emitter CES Voltage (V = Emitter-Base Voltage EBO ( Collector-Emitter CEO(sus) Sustaining Voltage (I = Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter BE(sat) Saturation Voltage h DC Current Gain ...

Page 3

... MAX. MIN. 5.3 0.185 2.6 0.087 0.8 0.016 1.4 0.039 2.4 0.079 3.4 0.118 15.9 0.602 20.3 0.776 14.8 0.559 5.5 3 0.079 BUTW92 inch TYP. MAX. 0.209 0.102 0.031 0.055 0.094 0.134 0.429 0.626 0.779 0.582 1.362 0.217 0.118 P025P 3/4 ...

Page 4

... BUTW92 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...

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