MSB709-RT1G ON Semiconductor, MSB709-RT1G Datasheet - Page 2

• Manufacturer Part Number: MSB709-RT1G
• Description: TRANS GP PNP -45V SC59
• Manufacturer: ON Semiconductor

Specifications of MSB709-RT1G

• Transistor Type: PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 10mA, 100mA
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 210 @ 2mA, 10V
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-59-3, SMT3, SOT-346, TO-236
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Other names: MSB709-RT1GOS; MSB709-RT1GOS; MSB709-RT1GOSTR

1. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ELECTRICAL CHARACTERISTICS
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
Collector − Emitter Breakdown Voltage
Collector − Base Breakdown Voltage
Emitter − Base Breakdown Voltage
Collector − Base Cutoff Current
Collector − Emitter Cutoff Current
DC Current Gain (Note 1)
Collector − Emitter Saturation Voltage
MSB−709RT1
MSB−709RT1G
(I
(I
(I
(V
(V
(V
(I
C
C
E
C
CB
CE
CE
= 10 mAdc, I
= 2.0 mAdc, I
= 10 mAdc, I
= 100 mAdc, I
= 45 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
Device
E
E
E
B
C
B
= 0)
= 0)
B
= 0)
= 0)
= 2.0 mAdc)
= 0)
= 10 mAdc)
Characteristic
(T
A
= 25°C)
http://onsemi.com
MSB709−RT1
2
(Pb−Free)
Package
SC−59
SC−59
V
V
V
Symbol
V
(BR)CEO
(BR)CBO
(BR)EBO
I
I
h
CE(sat)
CBO
CEO
FE1
3000 Units / Reel
3000 Units / Reel
−7.0
Min
−45
−60
210
Shipping
−
−
−
†
−100
Max
−0.1
−0.5
340
−
−
−
mAdc
nAdc
Unit
Vdc
Vdc
Vdc
Vdc
−