BC857BLT3G ON Semiconductor, BC857BLT3G Datasheet - Page 5

• Manufacturer Part Number: BC857BLT3G
• Description: TRANS PNP GP 45V 100MA SOT-23
• Manufacturer: ON Semiconductor

Specifications of BC857BLT3G

• Transistor Type: PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 220 @ 2mA, 5V
• Power - Max: 225mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

-200
-100
-5.0
-2.0
-50
-10
-1.0
0.07
0.05
0.03
0.02
0.01
1.0
0.7
0.5
0.3
0.2
0.1
0.1
Figure 14. Active Region Safe Operating Area
0.2
D = 0.5
0.2
0.1
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
0.05
-5.0
T
0.5
A
= 25°C
BC558, BC559
SINGLE PULSE
1.0
-10
T
SINGLE PULSE
BC557
BC556
J
1 s
= 25°C
2.0
-30 -45 -65 -100
Figure 13. Thermal Response
5.0
3 ms
http://onsemi.com
10
t, TIME (ms)
20
5
the transistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
T
valid for duty cycles to 10% provided T
may be calculated from the data in Figure 13. At high case or
ambient temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by the secondary breakdown.
A
The data of Figure 14 is based upon T
is variable depending upon conditions. Pulse curves are
P
(pk)
The safe operating area curves indicate I
DUTY CYCLE, D = t
50
t
1
100
t
2
200
1
/t
2
500
Z
R
Z
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
qJC
qJA
J(pk)
qJC
qJA
1.0 k
(t) = r(t) R
(t) = r(t) R
= 83.3°C/W MAX
= 200°C/W MAX
- T
C
J(pk)
J(pk)
= P
2.0 k
qJC
qJA
(pk)
C
≤ 150°C. T
= 150°C; T
1
−V
R
qJC
CE
(t)
5.0 k 10 k
limits of
J(pk)
C
or