MMBT4401WT1G ON Semiconductor, MMBT4401WT1G Datasheet - Page 4

• Manufacturer Part Number: MMBT4401WT1G
• Description: TRANS GP SS NPN 40V SOT323
• Manufacturer: ON Semiconductor

Specifications of MMBT4401WT1G

• Transistor Type: NPN
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 750mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 1V
• Power - Max: 150mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.6 A
• Maximum Dc Collector Current: 0.6 A
• Power Dissipation: 150 mW
• Maximum Operating Frequency: 250 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 20 at 0.1 mA at 1 V
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBT4401WT1GOS

these curves, a high- - gain and a low- - gain unit were selected from the MMBT4401WT1 lines, and the same units were used
to develop the correspondingly numbered curves on each graph.
This group of graphs illustrates the relationship between h
300
200
100
8.0
6.0
4.0
2.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
70
50
30
20
10
10
0
0.01 0.02 0.05
0.1
0.1
0.2
0.2
Figure 13. Voltage Feedback Ratio
I
I
I
I
C
C
C
C
Figure 9. Frequency Effects
0.3
0.3
= 1.0 mA, R
= 500 mA, R
= 100 mA, R
= 50 mA, R
0.1
I
Figure 11. Current Gain
I
C
C
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
0.2
0.5 0.7 1.0
0.5 0.7 1.0
f, FREQUENCY (kHz)
S
0.5
S
S
S
= 4.0 kΩ
= 150 Ω
= 200 Ω
= 2.0 kΩ
1.0
SMALL- -SIGNAL CHARACTERISTICS
2.0 5.0
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
2.0 3.0
2.0
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
V
V
CE
R
RS =
RS =
CE
S
10
3.0
= OPTIMUM
= 10 Vdc, T
SOURCE
RESISTANCE
= 10 Vdc, f = 1.0 kHz, T
20
5.0 7.0
5.0 7.0
h PARAMETERS
http://onsemi.com
50
A
100
10
10
= 25C; Bandwidth = 1.0 Hz
fe
4
and other “h” parameters for this series of transistors. To obtain
6.0
4.0
2.0
8.0
10
5.0 k
2.0 k
1.0 k
0
50 k
20 k
10 k
500
100
50
5.0
2.0
1.0
50
10
20
0.1
0.1
100 200
A
Figure 10. Source Resistance Effects
f = 1.0 kHz
= 25C
0.2
0.2
NOISE FIGURE
I
I
I
I
C
C
C
C
R
Figure 14. Output Admittance
S
= 50 mA
= 100 mA
= 500 mA
= 1.0 mA
Figure 12. Input Impedance
, SOURCE RESISTANCE (OHMS)
0.3
0.3
500 1.0 k 2.0 k
I
I
C
C
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
0.5 0.7 1.0
0.5 0.7 1.0
5.0 k 10 k 20 k
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
2.0 3.0
2.0 3.0
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
50 k
5.0 7.0
5.0 7.0
100 k
10
10