MMBT4126LT3G ON Semiconductor, MMBT4126LT3G Datasheet

TRANS GP SS PNP 25V SOT23

MMBT4126LT3G

Manufacturer Part Number
MMBT4126LT3G
Description
TRANS GP SS PNP 25V SOT23
Manufacturer
ON Semiconductor
Datasheet

Specifications of MMBT4126LT3G

Transistor Type
PNP
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
25V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 2mA, 1V
Power - Max
225mW
Frequency - Transition
250MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-

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Part Number:
MMBT4126LT3G
Quantity:
50 000
MMBT4126LT1G
General Purpose Transistor
PNP Silicon
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 2
THERMAL CHARACTERISTICS
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current−Continuous
Total Device Dissipation FR− 5 Board
Thermal Resistance, Junction−to−Ambient
(Note 1)
Total Device Dissipation Alumina
Substrate, (Note 2) @T
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
(Note 2)
Junction and Storage Temperature Range
Compliant
Moisture Sensitivity Level: 1
ESD Rating: − Human Body Model: > 4000 V
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
(Note 1) @T
Derate above 25°C
Characteristic
A
− Machine Model: > 400 V
Rating
= 25°C
A
= 25°C
Symbol
Symbol
T
V
V
V
R
R
J
P
P
CEO
CBO
EBO
, T
I
qJA
qJA
C
D
D
stg
−55 to +150
Value
−200
Max
−25
−25
225
556
300
417
1.8
2.4
−4
1
mW/°C
mW/°C
mAdc
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Vdc
mW
mW
°C
†For information on tape and reel specifications,
MMBT4126LT1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Device
(Note: Microdot may be in either location)
ORDERING INFORMATION
C3 = Device Code
M
G
MARKING DIAGRAM
BASE
http://onsemi.com
1
1
= Date Code*
= Pb−Free Package
(Pb−Free)
Package
SOT−23
CASE 318
STYLE 6
COLLECTOR
SOT−23
C3 M G
2
EMITTER
Publication Order Number:
G
3
2
3
3000/Tape & Reel
MMBT4126LT1/D
Shipping

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MMBT4126LT3G Summary of contents

Page 1

MMBT4126LT1G General Purpose Transistor PNP Silicon Features • Moisture Sensitivity Level: 1 • ESD Rating: − Human Body Model: > 4000 V − Machine Model: > 400 V • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note −1.0 mAdc Collector−Base Breakdown Voltage (I = −10 mAdc Emitter−Base Breakdown Voltage (I = −10 mAdc, I ...

Page 3

TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS (V CE 5.0 SOURCE RESISTANCE = 200 1 4.0 SOURCE RESISTANCE = 200 0 3.0 SOURCE RESISTANCE = 2 2.0 ...

Page 4

TYPICAL STATIC CHARACTERISTICS 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 1 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 1 25° ...

Page 5

... A A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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