MMBTA13LT3G ON Semiconductor, MMBTA13LT3G Datasheet - Page 2

TRANS SS DARL NPN 30V SOT23

MMBTA13LT3G

Manufacturer Part Number
MMBTA13LT3G
Description
TRANS SS DARL NPN 30V SOT23
Manufacturer
ON Semiconductor
Datasheet

Specifications of MMBTA13LT3G

Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
300mA
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
1.5V @ 100µA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
10000 @ 100mA, 5V
Power - Max
225mW
Frequency - Transition
125MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
30V
Collector-base Voltage(max)
30V
Emitter-base Voltage (max)
10V
Collector-emitter Saturation Voltage
1.5@0.1mA@100mAV
Collector Current (dc) (max)
300mA
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MMBTA13LT3G
Manufacturer:
ON
Quantity:
12 500
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
4. f
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
SMALL−SIGNAL CHARACTERISTICS
Collector −Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base −Emitter On Voltage
Current −Gain − Bandwidth Product (Note 4)
T
= |h
(I
(V
(V
(I
(I
(I
(I
(I
C
C
C
C
C
C
CB
EB
fe
= 100 mAdc, V
= 10 mAdc, V
= 100 mAdc, V
= 100 mAdc, I
= 100 mAdc, V
= 10 mAdc, V
| • f
= 10 Vdc, I
= 30 Vdc, I
test
.
C
E
CE
CE
B
BE
= 0)
= 0)
CE
CE
= 0.1 mAdc)
= 5.0 Vdc)
= 5.0 Vdc, f = 100 MHz)
= 0)
= 5.0 Vdc)
= 5.0 Vdc)
Characteristic
(T
A
= 25°C unless otherwise noted)
R
S
Figure 1. Transistor Noise Model
e
n
http://onsemi.com
i
n
2
TRANSISTOR
IDEAL
MMBTA13
MMBTA14
MMBTA13
MMBTA14
V
Symbol
V
(BR)CES
I
CE(sat)
I
V
h
CBO
EBO
f
FE
BE
T
10,000
10,000
20,000
5000
Min
125
30
Max
100
100
1.5
2.0
nAdc
nAdc
Unit
MHz
Vdc
Vdc
Vdc

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