PN2222ARLRMG ON Semiconductor, PN2222ARLRMG Datasheet - Page 5

• Manufacturer Part Number: PN2222ARLRMG
• Description: TRANS GP NPN 600MA 40V TO-92
• Manufacturer: ON Semiconductor

Specifications of PN2222ARLRMG

• Transistor Type: NPN
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 1V @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 625mW
• Frequency - Transition: 300MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

1.0
0.8
0.6
0.4
0.2
8.0
4.0
2.0
7.0
5.0
3.0
2.0
6.0
10
30
20
10
0
0
0.01 0.02 0.05
0.1
0.1
V
V
V
T
CE(sat)
BE(sat)
BE(on)
0.2
J
= 25°C
0.2 0.3 0.5 0.7
@ V
@ I
@ I
0.5
C
C
CE
/I
/I
Figure 7. Frequency Effects
B
B
1.0 2.0
I
500 mA, R
100 mA, R
50 mA, R
0.1
= 10 V
C
Figure 11. “On” Voltages
= 10
= 10
I
= 1.0 mA, R
C
Figure 9. Capacitances
, COLLECTOR CURRENT (mA)
REVERSE VOLTAGE (VOLTS)
0.2
1.0
f, FREQUENCY (kHz)
S
S
S
= 4.0 kW
5.0 10 20
= 200 W
= 2.0 kW
0.5
S
= 150 W
2.0 3.0 5.0 7.0 10
1.0 2.0
C
eb
50
5.0 10
R
R
R
S
S
S
100 200
= OPTIMUM
=
=
SOURCE
RESISTANCE
1.0 V
20
20 30
C
cb
http://onsemi.com
500 1.0 k
50
100
50
5
300
200
100
- 0.5
- 1.0
- 1.5
- 2.0
- 2.5
500
+0.5
8.0
4.0
2.0
6.0
10
70
50
0
0
50
1.0
0.1
Figure 10. Current−Gain Bandwidth Product
100 200
0.2
Figure 8. Source Resistance Effects
2.0
Figure 12. Temperature Coefficients
f = 1.0 kHz
0.5
V
T
CE
J
3.0
I
100 mA
500 mA
1.0 mA
C
R
= 25°C
S
= 50 mA
I
= 20 V
C
1.0 2.0
I
500 1.0 k 2.0 k
, SOURCE RESISTANCE (OHMS)
C
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
5.0 7.0
5.0
10
R
R
10
qVC
qVB
5.0 k 10 k 20 k
for V
for V
20
20
CE(sat)
BE
30
50
100 200
50
50 k 100 k
70 100
500