2N5550RLRPG ON Semiconductor, 2N5550RLRPG Datasheet - Page 4

• Manufacturer Part Number: 2N5550RLRPG
• Description: TRANS NPN SS GP 0.6A 140V TO-92
• Manufacturer: ON Semiconductor

Specifications of 2N5550RLRPG

• Transistor Type: NPN
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 140V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 10mA, 5V
• Power - Max: 625mW
• Frequency - Transition: 300MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

1000
500
300
200
100
50
30
20
10
0.2
10.2 V
t
DUTY CYCLE = 1.0%
V
r
, t
in
f
0.3
≤ 10 ns
t
r
@ V
Figure 6. Switching Time Test Circuit
INPUT PULSE
0.5
Values Shown are for I
t
d
CC
@ V
10 ms
V
= 30 V
CC
1.0
EB(off)
= 120 V
I
Figure 8. Turn−On Time
C
, COLLECTOR CURRENT (mA)
2.0
= 1.0 V
3.0 5.0
V
in
0.25 mF
V
C
BB
− 0.5
− 1.0
− 1.5
− 2.0
− 2.5
@ 10 mA
−8.8 V
100
100
2.5
2.0
1.5
1.0
0.5
10
5.1 k
0
R
0.1
B
t
r
@ V
20 30 50
0.2
CC
1N914
3.0 k
= 120 V
0.3
Figure 5. Temperature Coefficients
I
T
V
C
J
/I
CC
0.5
= 25°C
B
30 V
R
2N5550, 2N5551
I
= 10
C
http://onsemi.com
C
100
V
, COLLECTOR CURRENT (mA)
out
1.0
200
T
J
2.0
= − 55°C to +135°C
4
3.0
5000
3000
2000
1000
500
300
200
100
100
7.0
5.0
3.0
2.0
1.0
q
50
5.0
70
50
30
20
10
VC
0.2
0.2
q
VB
for V
t
0.3
s
for V
10
@ V
0.3
CE(sat)
0.5
BE(sat)
CC
20
= 120 V
0.5
30
1.0
V
I
Figure 9. Turn−Off Time
0.7
t
C
Figure 7. Capacitances
f
R
50
, COLLECTOR CURRENT (mA)
@ V
, REVERSE VOLTAGE (VOLTS)
2.0
1.0
CC
100
3.0 5.0
= 120 V
t
f
@ V
2.0
CC
= 30 V
10
3.0
20 30 50
5.0
C
ibo
7.0
I
T
C
J
T
/I
= 25°C
J
B
10
= 25°C
= 10
100
C
obo
200
20