MMBT2907AM3T5G ON Semiconductor, MMBT2907AM3T5G Datasheet - Page 5

• Manufacturer Part Number: MMBT2907AM3T5G
• Description: TRANS PNP GP 60V 600MA SOT-723
• Manufacturer: ON Semiconductor

Specifications of MMBT2907AM3T5G

• Transistor Type: PNP
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 1.6V @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 265mW
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

-1.0
-0.8
-0.6
-0.4
-0.2
8.0
6.0
4.0
2.0
7.0
5.0
3.0
2.0
10
30
20
10
-0.1
0
0
-0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20
0.01
0.02 0.05 0.1 0.2
T
-0.2 -0.3 -0.5
J
= 25°C
Figure 7. Frequency Effects
I
Figure 11. “On” Voltage
Figure 9. Capacitances
C
I
-500 mA, R
-50 mA, R
-100 mA, R
REVERSE VOLTAGE (VOLTS)
, COLLECTOR CURRENT (mA)
C
= -1.0 mA, R
V
CE(sat)
f, FREQUENCY (kHz)
-1.0
V
R
0.5 1.0 2.0
BE(sat)
s
s
@ I
s
s
= 2.7 kW
= OPTIMUM SOURCE RESISTANCE
C
= 560 W
= 1.6 kW
eb
C
-2.0 -3.0 -5.0
s
@ I
/I
= 430 W
B
= 10
C
V
/I
B
BE(on)
TYPICAL SMALL−SIGNAL Characteristics
= 10
5.0 10
@ V
-50 -100 -200
CE
-10
= -10 V
20
V
CE
http://onsemi.com
-20 -30
50 100
NOISE FIGURE
C
= 10 Vdc, T
cb
-500
5
+0.5
-0.5
-1.0
-1.5
-2.0
-2.5
A
400
300
200
100
8.0
6.0
4.0
2.0
10
80
60
40
30
20
= 25°C
-0.1 -0.2 -0.5 -1.0 -2.0
0
-1.0 -2.0
0
50
Figure 10. Current−Gain − Bandwidth Product
100
Figure 8. Source Resistance Effects
Figure 12. Temperature Coefficients
f = 1.0 kHz
200
V
T
-5.0
CE
J
= 25°C
R
s
= -20 V
I
I
C
C
, SOURCE RESISTANCE (OHMS)
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
-10
I
-100 mA
-500 mA
-1.0 mA
500 1.0 k 2.0 k
C
= -50 mA
-20
R
qVC
-5.0 -10 -20
R
for V
qVB
-50 -100 -200
for V
CE(sat)
BE
5.0 k 10 k
-50 -100 -200 -500
20 k
-500 -1000
50 k