BC639G ON Semiconductor, BC639G Datasheet - Page 3

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BC639G

Manufacturer Part Number
BC639G
Description
TRANSISTOR NPN GP 80V 1A TO-92
Manufacturer
ON Semiconductor
Datasheet

Specifications of BC639G

Transistor Type
NPN
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
500mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 150mA, 2V
Power - Max
625mW
Frequency - Transition
200MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
80 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
1 A
Maximum Dc Collector Current
1 A
Power Dissipation
625 mW
Maximum Operating Frequency
200 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
25 at 5 mA at 2 V
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Collector-emitter Voltage
80V
Collector-base Voltage
80V
Emitter-base Voltage
5V
Collector Current (dc) (max)
1A
Dc Current Gain (min)
25
Frequency (max)
200MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Package Type
TO-92
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
1000
500
200
100
500
300
100
50
20
10
50
20
5
2
1
1
1
Figure 3. Current−Gain — Bandwidth Product
P
Figure 1. Active Region Safe Operating Area
D
T
A
25°C
2
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
3 4 5
P
P
P
D
D
D
I
C
T
T
T
, COLLECTOR CURRENT (mA)
A
C
C
25°C
10
25°C
25°C
7
10
-0.2
-1.0
-1.6
-2.2
20
SOA = 1S
100
BC635
BC637
BC639
1
30 40 50 70
V
CE
Figure 5. Temperature Coefficients
3
= 2 V
http://onsemi.com
5
I
V
DT = 0°C to +100°C
C
CE
, COLLECTOR CURRENT (mA)
1000
100
10
= 2 VOLTS
3
30 50
500
200
100
0.6
0.4
0.2
0.8
50
20
1
0
1
1
V
Figure 4. “Saturation” and “On” Voltages
CE
100
= 2 V
3
V
q
CE(sat)
V
for V
V
5
Figure 2. DC Current Gain
BE(sat)
300 500
I
I
C
@ I
C
BE
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
10
C
10
@ I
/I
B
C
= 10
/I
1000
B
= 10
30 50
V
BE(on)
@ V
100
100
CE
= 2 V
300 500
1000
1000

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