MPS6652G ON Semiconductor, MPS6652G Datasheet - Page 2

• Manufacturer Part Number: MPS6652G
• Description: TRANS PNP GP SS 40V TO92
• Manufacturer: ON Semiconductor
• Type: Amplifierr

Specifications of MPS6652G

• Transistor Type: PNP
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 100mA, 1A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 500mA, 1V
• Power - Max: 625mW
• Frequency - Transition: 100MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Current, Collector: -1000 mA
• Current, Gain: 30
• Frequency: 100 MHz
• Package Type: TO-92
• Polarity: PNP
• Power Dissipation: 1.5 W
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 83.3 °C/W
• Voltage, Breakdown, Collector To Emitter: -40 V
• Voltage, Collector To Base: -30 V
• Voltage, Collector To Emitter: -40 V
• Voltage, Collector To Emitter, Saturation: -0.6 V
• Voltage, Emitter To Base: -4 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MPS6652GOS

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
Collector −Emitter Breakdown Voltage
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base−Emitter On Voltage
Current −Gain — Bandwidth Product
Output Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
MPS6601RLRAG
MPS6651G
MPS6652
MPS6652G
MPS6652RLRAG
(I
(I
(I
(V
(V
(V
(V
(I
(I
(I
(I
(I
(I
(V
C
C
E
C
C
C
C
C
C
CE
CE
CB
CB
CB
= 10 mAdc, I
= 1.0 mAdc, I
= 100 mAdc, I
= 100 mAdc, V
= 500 mAdc, V
= 1000 mAdc, V
= 1000 mAdc, I
= 500 mAdc, V
= 50 mAdc, V
= 25 Vdc, I
= 30 Vdc, I
= 25 Vdc, I
= 30 Vdc, I
= 10 Vdc, I
C
Device
B
B
E
E
E
E
B
CE
= 0)
= 0)
= 0)
= 0)
= 0)
= 0, f = 1.0 MHz)
CE
CE
CE
= 0)
= 0)
B
CE
= 10 Vdc, f = 100 MHz)
= 100 mAdc)
= 1.0 Vdc)
= 1.0 Vdc)
= 1.0 Vdc)
= 1.0 Vdc)
Characteristic
NPN − MPS6601; PNP − MPS6651, MPS6652
(T
A
= 25°C unless otherwise noted)
(V
CC
t
p
= 40 Vdc, I
w 300 ns Duty Cycle)
I
B1
http://onsemi.com
= 50 mAdc,
TO−92 (TO−226)
TO−92 (TO−226)
TO−92 (TO−226)
TO−92 (TO−226)
TO−92 (TO−226)
C
= 500 mAdc,
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
Package
MPS6601/6651
MPS6601/6651
MPS6601/6651
MPS6601/6651
2
MPS6652
MPS6652
MPS6652
MPS6652
V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I
I
CE(sat)
C
BE(on)
h
CES
CBO
f
obo
t
t
FE
t
t
T
d
s
r
f
2000 Units / Tape & Reel
2000 Units / Tape & Reel
Min
100
4.0
25
40
25
40
50
50
30
5000 Units / Bulk
−
−
−
−
−
−
−
−
−
−
−
Shipping
Max
250
0.1
0.1
0.1
0.1
0.6
1.2
30
25
30
50
−
−
−
−
−
−
−
−
−
†
mAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
pF
ns
ns
ns
ns
−