MPS6652G ON Semiconductor, MPS6652G Datasheet - Page 2
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MPS6652G
Manufacturer Part Number
MPS6652G
Description
TRANS PNP GP SS 40V TO92
Manufacturer
ON Semiconductor
Type
Amplifierr
Specifications of MPS6652G
Transistor Type
PNP
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
600mV @ 100mA, 1A
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
50 @ 500mA, 1V
Power - Max
625mW
Frequency - Transition
100MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Current, Collector
-1000 mA
Current, Gain
30
Frequency
100 MHz
Package Type
TO-92
Polarity
PNP
Power Dissipation
1.5 W
Primary Type
Si
Resistance, Thermal, Junction To Case
83.3 °C/W
Voltage, Breakdown, Collector To Emitter
-40 V
Voltage, Collector To Base
-30 V
Voltage, Collector To Emitter
-40 V
Voltage, Collector To Emitter, Saturation
-0.6 V
Voltage, Emitter To Base
-4 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MPS6652GOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MPS6652G
Manufacturer:
ON Semiconductor
Quantity:
95
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
Collector −Emitter Breakdown Voltage
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base−Emitter On Voltage
Current −Gain — Bandwidth Product
Output Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
MPS6601RLRAG
MPS6651G
MPS6652
MPS6652G
MPS6652RLRAG
(I
(I
(I
(V
(V
(V
(V
(I
(I
(I
(I
(I
(I
(V
C
C
E
C
C
C
C
C
C
CE
CE
CB
CB
CB
= 10 mAdc, I
= 1.0 mAdc, I
= 100 mAdc, I
= 100 mAdc, V
= 500 mAdc, V
= 1000 mAdc, V
= 1000 mAdc, I
= 500 mAdc, V
= 50 mAdc, V
= 25 Vdc, I
= 30 Vdc, I
= 25 Vdc, I
= 30 Vdc, I
= 10 Vdc, I
C
Device
B
B
E
E
E
E
B
CE
= 0)
= 0)
= 0)
= 0)
= 0)
= 0, f = 1.0 MHz)
CE
CE
CE
= 0)
= 0)
B
CE
= 10 Vdc, f = 100 MHz)
= 100 mAdc)
= 1.0 Vdc)
= 1.0 Vdc)
= 1.0 Vdc)
= 1.0 Vdc)
Characteristic
NPN − MPS6601; PNP − MPS6651, MPS6652
(T
A
= 25°C unless otherwise noted)
(V
CC
t
p
= 40 Vdc, I
w 300 ns Duty Cycle)
I
B1
http://onsemi.com
= 50 mAdc,
TO−92 (TO−226)
TO−92 (TO−226)
TO−92 (TO−226)
TO−92 (TO−226)
TO−92 (TO−226)
C
= 500 mAdc,
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
Package
MPS6601/6651
MPS6601/6651
MPS6601/6651
MPS6601/6651
2
MPS6652
MPS6652
MPS6652
MPS6652
V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I
I
CE(sat)
C
BE(on)
h
CES
CBO
f
obo
t
t
FE
t
t
T
d
s
r
f
2000 Units / Tape & Reel
2000 Units / Tape & Reel
Min
100
4.0
25
40
25
40
50
50
30
5000 Units / Bulk
−
−
−
−
−
−
−
−
−
−
−
Shipping
Max
250
0.1
0.1
0.1
0.1
0.6
1.2
30
25
30
50
−
−
−
−
−
−
−
−
−
†
mAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
pF
ns
ns
ns
ns
−