MPS751RLRPG ON Semiconductor, MPS751RLRPG Datasheet - Page 3

• Manufacturer Part Number: MPS751RLRPG
• Description: TRANSISTOR PNP GP 2A 60V TO-92
• Manufacturer: ON Semiconductor

Specifications of MPS751RLRPG

• Transistor Type: PNP
• Current - Collector (ic) (max): 2A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 200mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 75 @ 1A, 2V
• Power - Max: 625mW
• Frequency - Transition: 75MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: MPS751RLRPG; MPS751RLRPGOSTR

0.05
0.02
0.01
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
4.0
2.0
1.0
0.5
0.2
0.1
10
0
0
0.05
1.0
50
0.1 0.2
I
C
T
A
= 10 mA I
2.0
= 25°C
V
CE
Figure 7. MPS650, MPS651 SOA,
100
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Collector Saturation Region
Figure 5. MPS650, MPS651
Figure 3. MPS650, MPS651
WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
0.5 1.0 2.0
I
C
, COLLECTOR CURRENT (mA)
C
Safe Operating Area
= 100 mA
I
B
200
5.0
, BASE CURRENT (mA)
On Voltages
V
NPN − MPS650, MPS651; PNP − MPS750, MPS751
BE(on)
V
NPN
NPN
NPN
BE(sat)
10
MPS65
I
MPS65
C
5.0 10 20
V
@ V
500
CE(sat)
= 500 mA
0
1
@ I
CE
T
C
1.0 ms
= 2.0 V
C
/I
@ I
20
B
= 25°C
1.0 A
= 10
C
/I
B
= 10
T
50 100 200 500
I
J
C
= 25°C
= 2.0 A
2.0 A
50
100 ms
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4.0 A
100
3
−0.05
−0.02
−0.01
−2.0
−1.8
−1.6
−1.4
−1.2
−1.0
−0.8
−0.6
−0.4
−0.2
−4.0
−2.0
−1.0
−0.5
−0.2
−0.1
−1.0
−0.9
−0.8
−0.7
−0.6
−0.5
−0.4
−0.3
−0.2
−0.1
−10
0
0
−0.05
−1.0
−50
−0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20
I
T
C
A
−2.0
= −10 mA
= 25°C
V
Figure 8. MPS750, MPS751 SOA,
CE
−100
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Collector Saturation Region
Figure 4. MPS750, MPS751
Figure 6. MPS750, MPS751
WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
I
C
, COLLECTOR CURRENT (mA)
Safe Operating Area
I
−5.0
−200
B
, BASE CURRENT (mA)
I
C
On Voltages
= −100 mA
V
CE(sat)
PNP
PNP
PNP
−10
MPS75
V
MPS75
BE(sat)
0
−500
1
I
V
C
@ I
BE(on)
= −500 mA
1.0 ms
@ I
C
T
−20
C
/I
B
= 25°C
C
@ V
−1.0 A
= 10
/I
B
= 10
CE
−50 −100 −200 −500
= 2.0 V
−2.0 A
100 ms
T
−50
J
I
C
= 25°C
= −2.0 A
−4.0 A
−100