BCP53-10T1G ON Semiconductor, BCP53-10T1G Datasheet
BCP53-10T1G
Manufacturer Part Number
BCP53-10T1G
Description
TRANSISTOR PNP 80V 1.5A SOT-223
Manufacturer
ON Semiconductor
Datasheet
1.BCP53-16T1G.pdf
(10 pages)
Specifications of BCP53-10T1G
Transistor Type
PNP
Current - Collector (ic) (max)
1.5A
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
500mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
63 @ 150mA, 2V
Power - Max
1.5W
Frequency - Transition
50MHz
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BCP53-10T1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
BCP53-10T1G
Manufacturer:
ON/安森美
Quantity:
20 000
BCP53 Series
PNP Silicon
Epitaxial Transistors
amplifier applications. The device is housed in the SOT−223 package
which is designed for medium power surface mount applications.
•
•
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2010
September, 2010 − Rev. 7
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Total Power Dissipation
Operating and Storage
Thermal Resistance,
Lead Temperature for Soldering,
Time in Solder Bath
This PNP Silicon Epitaxial transistor is designed for use in audio
formed leads absorb thermal stress during soldering, eliminating the
possibility of damage to the die
BCP53T1 = AH
BCP53−10T1 = AH−10
BCP53−16T1 = AH−16
Compliant
High Current: 1.5 A
NPN Complement is BCP56
The SOT−223 Package can be soldered using wave or reflow. The
Device Marking:
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
@ T
Derate above 25°C
Temperature Range
Junction to Ambient
(surface mounted)
0.0625″ from case
A
= 25°C (Note 1.)
Characteristic
Rating
(T
C
= 25°C unless otherwise noted)
Symbol
Symbol
T
V
V
V
J
R
P
, T
CEO
CBO
EBO
T
I
qJA
C
D
L
stg
−65 to
Value
−100
+150
−5.0
Max
83.3
−80
260
1.5
1.5
12
10
1
mW/°C
Watts
°C/W
Unit
Unit
Vdc
Vdc
Vdc
Adc
°C
°C
s
†For information on tape and reel specifications,
BCP53T1G
BCP53−10T1G
BCP53−16T1G
BCP53−16T3G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
CURRENT SURFACE MOUNT
Device
(Note: Microdot may be in either location)
CASE 318E
SOT−223
STYLE 1
MEDIUM POWER HIGH
PNP TRANSISTORS
ORDERING INFORMATION
BASE
1
http://onsemi.com
A
Y
W
XXXXX = Specific Device Code
G
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
Package
SOT−223
SOT−223
SOT−223
SOT−223
COLLECTOR 2,4
MARKING DIAGRAM
EMITTER 3
Publication Order Number:
1
= Assembly Location
= Year
= Work Week
= Pb−Free Package
XXXXXG
AYW
1000/T ape & Reel
1000/T ape & Reel
1000/T ape & Reel
4000/T ape & Reel
G
Shipping
BCP53T1/D
†
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BCP53-10T1G Summary of contents
Page 1
... Device Marking: BCP53T1 = AH BCP53−10T1 = AH−10 BCP53−16T1 = AH−16 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (T = 25°C unless otherwise noted) ...
Page 2
...
Page 3
... A Symbol = (BR)CBO = (BR)CEO = 1.0 kW (BR)CER = (BR)EBO = CBO = EBO h FE BCP53 BCP53−10 BCP53−16 = − 50 mAdc CE(sat) = − 2.0 Vdc BE(on http://onsemi.com 2 Min Typ Max Unit −100 − − Vdc −80 − − Vdc −100 − − Vdc −5.0 − ...
Page 4
...
Page 5
... BCP53, −10 1.1 1.0 0.9 −55°C 0.8 0.7 +25°C 0.6 0.5 +150°C 0.4 0.001 0.01 0 COLLECTOR CURRENT (A) C Figure 5. BCP53, −10 Base Emitter Saturation Voltage vs. Collector Current TYPICAL CHARACTERISTICS 200 180 +150°C 160 140 −55°C 120 100 +25° ...
Page 6
...
Page 7
... I , COLLECTOR CURRENT (A) C Figure 7. BCP53, −10 Base Emitter Turn−On Voltage vs. Collector Current V 1.0 BCP53, −10, − 1.0 A 0.9 0 500 mA 0.7 0 100 mA 0.5 0.4 0.3 0.2 0 ...
Page 8
...
Page 9
... PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 6.3 mm inches ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your loca Sales Representative BCP53T1/D MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 −−− 0.078 0.287 ...
Page 10
...