BCP53-16T3G ON Semiconductor, BCP53-16T3G Datasheet - Page 3
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BCP53-16T3G
Manufacturer Part Number
BCP53-16T3G
Description
TRANS PNP 80V 1.5A SOT-223
Manufacturer
ON Semiconductor
Datasheet
1.BCP53-16T1G.pdf
(10 pages)
Specifications of BCP53-16T3G
Transistor Type
PNP
Current - Collector (ic) (max)
1.5A
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
500mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 150mA, 2V
Power - Max
1.5W
Frequency - Transition
50MHz
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BCP53-16T3G
Manufacturer:
ON
Quantity:
30 000
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Collector−Base Breakdown Voltage (I
Collector−Emitter Breakdown Voltage (I
Collector−Emitter Breakdown Voltage (I
Emitter−Base Breakdown Voltage (I
Collector−Base Cutoff Current (V
Emitter−Base Cutoff Current (V
DC Current Gain (I
Collector−Emitter Saturation Voltage (I
Base−Emitter On Voltage (I
Current−Gain − Bandwidth Product
(I
(I
(I
C
C
C
= −150 mAdc, V
= − 500 mAdc, V
= −10 mAdc, V
C
CE
= − 5.0 mAdc, V
CE
CE
= − 5.0 Vdc, f = 35 MHz)
= − 2.0 Vdc)
= − 2.0 Vdc) All Part Types
C
Characteristics
= − 500 mAdc, V
EB
CB
= − 5.0 Vdc, I
E
= − 30 Vdc, I
CE
C
= −10 mAdc, I
C
= −100 mAdc, I
C
C
= − 2.0 Vdc) All Part Types
= − 500 mAdc, I
(T
= −1.0 mAdc, I
= −100 mAdc, R
A
= 25°C unless otherwise noted)
CE
C
E
= − 2.0 Vdc)
= 0)
= 0)
C
= 0)
E
= 0)
B
B
BE
http://onsemi.com
= − 50 mAdc)
= 0)
= 1.0 kW)
BCP53−10
BCP53−16
BCP53
2
V
V
V
V
Symbol
V
V
(BR)CBO
(BR)CEO
(BR)CER
(BR)EBO
CE(sat)
I
I
BE(on)
h
CBO
EBO
f
FE
T
−100
−100
−5.0
−80
Min
100
25
40
63
25
−
−
−
−
−
Typ
50
−
−
−
−
−
−
−
−
−
−
−
−
−
−100
−0.5
Max
−1.0
−10
250
160
250
−
−
−
−
−
−
−
nAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
−