MPS651RLRMG ON Semiconductor, MPS651RLRMG Datasheet - Page 3

• Manufacturer Part Number: MPS651RLRMG
• Description: TRANS NPN SS 2A 60V TO92
• Manufacturer: ON Semiconductor

Specifications of MPS651RLRMG

• Transistor Type: NPN
• Current - Collector (ic) (max): 2A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 200mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 75 @ 1A, 2V
• Power - Max: 625mW
• Frequency - Transition: 75MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: MPS651RLRMGOS

0.05
0.02
0.01
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
4.0
2.0
1.0
0.5
0.2
0.1
10
0
0
0.05
1.0
50
0.1 0.2
I
C
T
A
= 10 mA I
2.0
= 25°C
V
CE
Figure 7. MPS650, MPS651 SOA,
100
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Collector Saturation Region
Figure 5. MPS650, MPS651
Figure 3. MPS650, MPS651
WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
0.5 1.0 2.0
I
C
, COLLECTOR CURRENT (mA)
C
Safe Operating Area
= 100 mA
I
B
200
5.0
, BASE CURRENT (mA)
On Voltages
V
NPN − MPS650, MPS651; PNP − MPS750, MPS751
BE(on)
V
NPN
NPN
NPN
BE(sat)
10
MPS65
I
MPS65
C
5.0 10 20
V
@ V
500
CE(sat)
= 500 mA
0
1
@ I
CE
T
C
1.0 ms
= 2.0 V
C
/I
@ I
20
B
= 25°C
1.0 A
= 10
C
/I
B
= 10
T
50 100 200 500
I
J
C
= 25°C
= 2.0 A
2.0 A
50
100 ms
http://onsemi.com
4.0 A
100
3
−0.05
−0.02
−0.01
−2.0
−1.8
−1.6
−1.4
−1.2
−1.0
−0.8
−0.6
−0.4
−0.2
−4.0
−2.0
−1.0
−0.5
−0.2
−0.1
−1.0
−0.9
−0.8
−0.7
−0.6
−0.5
−0.4
−0.3
−0.2
−0.1
−10
0
0
−0.05
−1.0
−50
−0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20
I
T
C
A
−2.0
= −10 mA
= 25°C
V
Figure 8. MPS750, MPS751 SOA,
CE
−100
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Collector Saturation Region
Figure 4. MPS750, MPS751
Figure 6. MPS750, MPS751
WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
I
C
, COLLECTOR CURRENT (mA)
Safe Operating Area
I
−5.0
−200
B
, BASE CURRENT (mA)
I
C
On Voltages
= −100 mA
V
CE(sat)
PNP
PNP
PNP
−10
MPS75
V
MPS75
BE(sat)
0
−500
1
I
V
C
@ I
BE(on)
= −500 mA
1.0 ms
@ I
C
T
−20
C
/I
B
= 25°C
C
@ V
−1.0 A
= 10
/I
B
= 10
CE
−50 −100 −200 −500
= 2.0 V
−2.0 A
100 ms
T
−50
J
I
C
= 25°C
= −2.0 A
−4.0 A
−100