NSS1C201MZ4T3G ON Semiconductor, NSS1C201MZ4T3G Datasheet - Page 4

• Manufacturer Part Number: NSS1C201MZ4T3G
• Description: TRANS NPN 100V 2A SOT223-4
• Manufacturer: ON Semiconductor

Specifications of NSS1C201MZ4T3G

• Transistor Type: NPN
• Current - Collector (ic) (max): 2A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 180mV @ 200mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 500mA, 2V
• Power - Max: 800mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

1.00
0.10
0.01
1.4
1.2
0.8
0.6
0.4
0.2
50
45
40
35
30
25
20
15
10
1
0
5
0
0.0001
0
0.001
I
Figure 7. Base−Emitter Saturation Voltage
C
10
/I
Figure 9. Collector Saturation Region
B
V
= 50
20
CB
Figure 11. Output Capacitance
I
C
I
, COLLECTOR BASE VOLTAGE (V)
0.001
C
0.01
= 0.1 A
0.5 A
, COLLECTOR CURRENT (A)
30
I
B
150°C
25°C
, BASE CURRENT (A)
−55°C
40
50
0.1
0.01
1 A
60
70
fT
0.1
EST
1
T
80
J
T
J
= 25°C
2 A
= 1 MHz
= 25°C
http://onsemi.com
90
3 A
100
10
1
4
400
350
300
250
200
150
100
120
100
1.2
1.0
0.8
0.6
0.4
0.2
0.0
50
80
60
40
20
0
0
0.001
0.001
0
Figure 12. Current Gain Bandwidth Product
V
fT
CE
EST
T
V
1
J
CE
= 2 V
= 25°C
= 1 MHz
Figure 8. Base−Emitter Voltage
V
= 5 V
Figure 10. Input Capacitance
EB
I
I
0.01
0.01
C
C
2
, BASE−EMITTER VOLTAGE (V)
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
150°C
−55°C
25°C
3
0.1
0.1
4
5
fT
EST
1
T
6
1
J
= 25°C
= 1 MHz
7
10
10
8