2N5195G ON Semiconductor, 2N5195G Datasheet - Page 3

• Manufacturer Part Number: 2N5195G
• Description: TRANS PNP PWR GP 4A 80V TO225AA
• Manufacturer: ON Semiconductor
• Type: Powerr

Specifications of 2N5195G

• Transistor Type: PNP
• Current - Collector (ic) (max): 4A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 1.4V @ 1A, 4A
• Current - Collector Cutoff (max): 1mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 1.5A, 2V
• Power - Max: 40W
• Frequency - Transition: 2MHz
• Mounting Type: Through Hole
• Package / Case: TO-225-3
• Transistor Polarity: PNP
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 4 A
• Power Dissipation: 40 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 4 A
• Dc Collector/base Gain Hfe Min: 20
• Maximum Operating Frequency: 2 MHz
• Minimum Operating Temperature: - 65 C
• Current, Collector: 4 A
• Current, Gain: 7
• Frequency: 2 MHz
• Package Type: TO-225AA
• Polarity: PNP
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 3.12 °C/W
• Voltage, Breakdown, Collector To Emitter: 80 V
• Voltage, Collector To Base: 80 V
• Voltage, Collector To Emitter: 80 V
• Voltage, Collector To Emitter, Saturation: 1.4 V
• Voltage, Emitter To Base: 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 2N5195GOS

10
10
10
2.0
1.6
1.2
0.8
0.4
10
10
10
10
2.0
1.6
1.2
0.8
0.4
0
−1
− 2
− 3
0.005
0.05
0
3
2
1
0
+0.4
0.07 0.1
+0.3 +0.2 +0.1
I
0.01 0.02 0.03 0.05
C
V
T
CE
= 10 mA
J
REVERSE
= 150°C
V
Figure 5. Collector Cut−Off Region
= 30 Vdc
100°C
BE
T
V
25°C
J
BE(sat)
, BASE−EMITTER VOLTAGE (VOLTS)
= 25°C
I
C
Figure 3. “On” Voltage
, COLLECTOR CURRENT (AMP)
@ I
0.2
V
CE(sat)
C
/I
T
B
J
= 10
0
0.3
= 25°C
@ I
0.1
−0.1 −0.2 −0.3 −0.4 −0.5 −0.6
C
/I
B
0.5 0.7 1.0
= 10
0.2 0.3
I
CES
100 mA
0.5
V
Figure 2. Collector Saturation Region
BE
FORWARD
@ V
1.0
CE
2.0
= 2.0 V
2N5194, 2N5195
2.0
http://onsemi.com
I
B
, BASE CURRENT (mA)
3.0
3.0
4.0
3
5.0 7.0
+2.5
+2.0
+1.5
+1.0
+0.5
−0.5
−1.0
−1.5
−2.0
−2.5
10
10
10
10
10
10
0.005 0.01 0.020.03 0.05
0
7
6
5
4
3
2
20
10
Figure 6. Effects of Base−Emitter Resistance
I
C
= 2 x I
OBTAINED FROM FIGURE 5)
1.0 A
40
Figure 4. Temperature Coefficients
(TYPICAL I
20
CES
*qV
T
I
C
J
, JUNCTION TEMPERATURE (°C)
60
C
qV
, COLLECTOR CURRENT (AMP)
30
for V
CES
B
I
C
for V
≈ I
VALUES
CE(sat)
50 70
CES
BE
80
0.1
I
*APPLIES FOR I
C
= 10 x I
T
0.2 0.3
J
100
100
= −65°C to +150°C
3.0 A
CES
0.5
C
120
/I
B
200
≤ h
1.0
FE
V
CE
300
140
@ V
= 30 V
2.0
CE
3.0
500
160
4.0