MJB45H11T4G ON Semiconductor, MJB45H11T4G Datasheet - Page 2

• Manufacturer Part Number: MJB45H11T4G
• Description: TRANS PWR PNP 10A 80V D2PAK-3
• Manufacturer: ON Semiconductor

Specifications of MJB45H11T4G

• Transistor Type: PNP
• Current - Collector (ic) (max): 10A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 1V @ 400mA, 8A
• Current - Collector Cutoff (max): 10µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 4A, 1V
• Power - Max: 2W
• Frequency - Transition: 40MHz
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: PNP
• Number Of Elements: 1
• Collector-emitter Voltage: 80V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 10A
• Dc Current Gain (min): 60
• Power Dissipation: 2W
• Frequency (max): 40MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: D2PAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MJB45H11T4G; MJB45H11T4GOSTR

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SWITCHING TIMES
Collector−Emitter Sustaining Voltage (I
Collector Cutoff Current (V
Emitter Cutoff Current (V
Collector−Emitter Saturation Voltage (I
Base−Emitter Saturation Voltage (I
DC Current Gain (V
DC Current Gain (V
Collector Capacitance (V
Gain Bandwidth Product (I
Delay and Rise Times(I
Storage Time(I
Fall Time(I
0.07
0.05
0.03
0.02
0.01
1.0
0.7
0.5
0.3
0.2
0.1
0.01
C
0.01
= 5 Adc, I
D = 0.5
C
0.02
0.05
0.02
0.1
0.2
= 5 Adc, I
CE
CE
SINGLE PULSE
B1
= 1 Vdc, I
= 1 Vdc, I
C
EB
CB
= I
= 5 Adc, I
0.05
C
CE
B1
B2
= 5 Vdc)
= 10 Vdc, f
= 0.5 Adc, V
= I
= Rated V
= 0.5 Adc)
Characteristic
B2
C
C
0.1
= 2 Adc)
= 4 Adc)
C
= 0.5 Adc)
B1
= 8 Adc, I
= 0.5 Adc)
C
C
test
CEO
= 8 Adc, I
= 30 mA, I
CE
MJB44H11 (NPN), MJB45H11 (PNP)
(T
0.2
= 1 MHz)
C
, V
= 10 Vdc, f = 20 MHz)
= 25°C unless otherwise noted)
B
BE
= 0.8 Adc)
= 0)
B
Figure 1. Thermal Response
B
0.5
= 0.4 Adc)
= 0)
http://onsemi.com
1.0
t, TIME (ms)
2.0
2
MJB44H11
MJB45H11
MJB44H11
MJB45H11
MJB44H11
MJB45H11
MJB44H11
MJB45H11
MJB44H11
MJB45H11
Z
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
qJC(t)
J(pk)
qJC
5.0
= 1.56°C/W MAX
− T
= r(t) R
C
= P
10
V
qJC
Symbol
V
V
(pk)
CEO(sus)
t
I
I
CE(sat)
BE(sat)
d
1
h
C
CES
EBO
f
t
Z
FE
t
+ t
T
cb
s
f
qJC(t)
r
20
Min
80
60
40
50
−
−
−
−
−
−
−
−
−
−
−
−
−
−
P
(pk)
DUTY CYCLE, D = t
100
Typ
130
230
300
135
500
500
140
100
t
50
40
1
−
−
−
−
−
−
−
t
2
200
Max
1.0
1.5
10
50
−
−
−
−
−
−
−
−
−
−
−
−
−
1
/t
2
500
MHz
Unit
Vdc
Vdc
Vdc
mA
mA
pF
ns
ns
ns
−
1.0 k