MJE800G ON Semiconductor, MJE800G Datasheet - Page 5

• Manufacturer Part Number: MJE800G
• Description: TRANS DARL NPN 4A 60V TO225AA
• Manufacturer: ON Semiconductor
• Type: Power, Switchr

Specifications of MJE800G

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 4A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 750 @ 1.5A, 3V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: TO-225-3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Collector- Base Voltage Vcbo: 60 V
• Maximum Dc Collector Current: 4 A
• Maximum Collector Cut-off Current: 100 uA
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 55 C
• Current, Gain: 100
• Current, Input: 0.1 A
• Current, Output: 4 A
• Package Type: TO-225
• Polarity: NPN
• Power Dissipation: 40 W
• Primary Type: Si
• Voltage, Collector To Emitter, Saturation: 3 V
• Voltage, Input: 5 V
• Voltage, Output: 60 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MJE800GOS

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