MJE802G ON Semiconductor, MJE802G Datasheet - Page 2

• Manufacturer Part Number: MJE802G
• Description: TRANS DARL NPN 4A 80V TO225AA
• Manufacturer: ON Semiconductor
• Type: Power, Switchr

Specifications of MJE802G

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 4A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 750 @ 1.5A, 3V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: TO-225-3
• Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 80V
• Collector-base Voltage(max): 80V
• Emitter-base Voltage (max): 5V
• Collector Current (dc) (max): 4A
• Dc Current Gain: 100@4A@3V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-225
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 5 V
• Collector- Base Voltage Vcbo: 80 V
• Maximum Dc Collector Current: 4 A
• Maximum Collector Cut-off Current: 100 uA
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 55 C
• Current, Gain: 100
• Current, Input: 0.1 A
• Current, Output: 4 A
• Power Dissipation: 40 W
• Primary Type: Si
• Voltage, Collector To Emitter, Saturation: 3 V
• Voltage, Input: 5 V
• Voltage, Output: 80 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Compliant
• Other names: MJE802GOS

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain (Note 1)
Collector−Emitter Saturation Voltage (Note 1)
Base−Emitter On Voltage (Note 1)
Small−Signal Current Gain
(I
(V
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
C
C
C
C
C
C
C
C
C
C
C
CE
CE
BE
= 50 mAdc, I
= 1.5 Adc, V
= 2.0 Adc, V
= 4.0 Adc, V
= 1.5 Adc, I
= 2.0 Adc, I
= 4.0 Adc, I
= 1.5 Adc, V
= 2.0 Adc, V
= 4.0 Adc, V
= 1.5 Adc, V
(V
(V
= 5.0 Vdc, I
= 60 Vdc, I
= 80 Vdc, I
CB
CB
= Rated BV
= Rated BV
B
B
B
CE
CE
CE
CE
CE
CE
CE
B
B
B
= 30 mAdc)
= 40 mAdc)
= 40 mAdc)
C
= 0)
= 0)
= 0)
= 0)
= 3.0 Vdc)
= 3.0 Vdc)
= 3.0 Vdc)
= 3.0 Vdc)
= 3.0 Vdc)
= 3.0 Vdc)
= 3.0 Vdc, f = 1.0 MHz)
CEO
CEO
, I
, I
E
E
Characteristic
= 0)
= 0, T
50
40
30
20
10
0
25
(T
C
= 100_C)
C
= 25_C unless otherwise noted)
MJE702, MJE703, MJE802, MJE803
MJE702, MJE703, MJE802, MJE803
MJE700, MJE702, MJE800, MJE802
MJE700, MJE702, MJE800, MJE802
MJE700, MJE702, MJE800, MJE802
50
TO-126
Figure 1. Power Derating
T
http://onsemi.com
C
, CASE TEMPERATURE (°C)
TO-220AB
75
MJE700, MJE800
MJE700, MJE800
MJE703, MJE803
MJE703, MJE803
MJE703, MJE803
2
All devices
All devices
All devices
100
125
V
Symbol
V
V
(BR)CEO
I
I
I
CE(sat)
BE(on)
h
CEO
CBO
EBO
h
FE
fe
150
Min
750
750
100
1.0
60
80
−
−
−
−
−
−
−
−
−
−
−
Max
100
100
100
500
2.0
2.5
2.8
3.0
2.5
2.5
3.0
−
−
−
−
−
−
mAdc
mAdc
mAdc
Unit
Vdc
Vdc
Vdc
−
−