MJE350G ON Semiconductor, MJE350G Datasheet - Page 2

• Manufacturer Part Number: MJE350G
• Description: TRANS PWR PNP .5A 300V TO225AA
• Manufacturer: ON Semiconductor
• Type: Medium Powerr

Specifications of MJE350G

• Transistor Type: PNP
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 300V
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 50mA, 10V
• Power - Max: 20W
• Mounting Type: Through Hole
• Package / Case: TO-225-3
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 300 V
• Emitter- Base Voltage Vebo: 3 V
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 20 W
• Continuous Collector Current: 0.5 A
• Dc Collector/base Gain Hfe Min: 30
• Current, Collector: 500 mA
• Current, Gain: 240
• Package Type: TO-225
• Polarity: PNP
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 6.25 °C/W
• Voltage, Breakdown, Collector To Emitter: 300 V
• Voltage, Collector To Emitter: 300 V
• Voltage, Emitter To Base: 3 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Frequency - Transition: -
• Vce Saturation (max) @ Ib, Ic: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MJE350GOS

a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
v 150_C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
There are two limitations on the power handling ability of
The data of Figure 3 is based on T
1000
200
100
700
500
300
200
100
70
50
30
20
10
30
20
70
50
10
20
5.0
Figure 3. Active−Region Safe Operating Area
T
J
7.0
= 150°C
−55 °C
30
25°C
10
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
BONDING WIRE LIMITED
THERMALLY LIMITED @ T
SECOND BREAKDOWN LIMITED
T
Figure 1. DC Current Gain
J
I
C
= 150°C
V
V
, COLLECTOR CURRENT (mA)
20
dc
50
CE
CC
1.0 ms
= 2.0 V
= 10 V
30
70
50
100
70
J(pk)
C
= 25°C
100
100 ms
= 150_C; T
200
200
500 ms
C
http://onsemi.com
300
− V
300
J(pk)
C
CE
is
400
500
2
+1.2
+0.8
+0.4
−0.4
−0.8
−1.2
−1.6
−2.0
−2.4
−2.8
1.0
0.8
0.6
0.4
0.2
8.0
4.0
20
16
12
0
0
0
5.0
5.0
0
V
7.0
7.0
V
T
BE(sat)
*APPLIES FOR I
CE(sat)
*q
J
q
= 25°C
V
VB
VC
20
BE
Figure 4. Temperature Coefficients
10
10
for V
for V
@ I
@ V
C
BE
CE(sat)
/I
CE
40
Figure 5. Power Derating
Figure 2. “On” Voltages
B
I
I
C
C
T
= 10
, COLLECTOR CURRENT (mA)
= 10 V
, COLLECTOR CURRENT (mA)
20
C
20
C
, CASE TEMPERATURE (°C)
/I
B
60
< h
30
30
FE/4
80
50
50
+25 °C to +100°C
+25 °C to +150°C
70
70
100
−55 °C to +25°C
100
100
+100 °C to +150°C
−55 °C to +25°C
120
I
C
/I
I
200 300
200
B
C
/I
= 10
B
140
= 5.0
300
500
500
160