MJE210G ON Semiconductor, MJE210G Datasheet

MJE210G

Manufacturer Part Number

MJE210G

Description

TRANS PWR PNP 5A 25V TO225AA

Manufacturer

ON Semiconductor

Type

Powerr

Datasheets

1.MJE210TG.pdf (6 pages)

2.MJE200G.pdf (3 pages)

Specifications of MJE210G

Transistor Type

PNP

Current - Collector (ic) (max)

Voltage - Collector Emitter Breakdown (max)

40V

Vce Saturation (max) @ Ib, Ic

1.8V @ 1A, 5A

Dc Current Gain (hfe) (min) @ Ic, Vce

45 @ 2A, 1V

Power - Max

15W

Frequency - Transition

65MHz

Mounting Type

Through Hole

Package / Case

TO-225-3

Transistor Polarity

PNP

Mounting Style

Through Hole

Collector- Emitter Voltage Vceo Max

40 V

Emitter- Base Voltage Vebo

8 V

Maximum Dc Collector Current

5 A

Power Dissipation

15 W

Maximum Operating Temperature

+ 150 C

Continuous Collector Current

5 A

Dc Collector/base Gain Hfe Min

Maximum Operating Frequency

65 MHz

Minimum Operating Temperature

- 65 C

Current, Collector

5 A

Current, Gain

Frequency

65 MHz

Package Type

TO-225

Polarity

PNP

Primary Type

Resistance, Thermal, Junction To Case

8.34 °C/W

Voltage, Breakdown, Collector To Emitter

40 V

Voltage, Collector To Base

25 V

Voltage, Collector To Emitter

40 V

Voltage, Collector To Emitter, Saturation

1.8 V

Voltage, Emitter To Base

8 V

Number Of Elements

Collector-emitter Voltage

25V

Collector-base Voltage

40V

Emitter-base Voltage

Collector Current (dc) (max)

Dc Current Gain (min)

Frequency (max)

65MHz

Operating Temp Range

-65C to 150C

Operating Temperature Classification

Military

Mounting

Through Hole

Pin Count

3 +Tab

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Collector Cutoff (max)

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

MJE210GOS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

MJE210G

Manufacturer:

ON/安森美

Quantity:

20 000

Company:

H&T Electronics

Part Number:

MJE210G

Quantity:

200

Current page: 1 of 6
Download datasheet (116Kb)

MJE200 - NPN,

MJE210 - PNP

Complementary Silicon

Power Plastic Transistors

audio amplifier applications.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb-Free strategy and soldering details, please

July, 2007 - Rev. 12

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Base Current

Total Power Dissipation @ T

Operating and Storage Junction

Temperature Range

Thermal Resistance, Junction-to-Case

Thermal Resistance,

These devices are designed for low voltage, low-power, high-gain

Collector-Emitter Sustaining Voltage -

High DC Current Gain -

Low Collector-Emitter Saturation Voltage -

High Current-Gain - Bandwidth Product -

Annular Construction for Low Leakage -

Pb-Free Packages are Available*

Derate above 25_C

Junction-to-Ambient

CBO

Characteristic

CEO(sus)

CE(sat)

= 65 MHz (Min) @ I

= 100 mAdc

= 70 (Min) @ I

= 45 (Min) @ I

= 10 (Min) @ I

Rating

= 100 nAdc @ Rated V

- Continuous

- Peak

= 0.3 Vdc (Max) @ I

= 0.75 Vdc (Max) @ I

= 25 Vdc (Min) @ I

Preferred Device

= 25_C

= 500 mAdc

= 2.0 Adc

= 5.0 Adc

Symbol

CEO

, T

= 500 mAdc

= 10 mAdc

stg

= 2.0 Adc

–65 to +150

Value

0.012

0.12

Max

8.34

83.4

8.0

5.0

1.0

1.5

mW/_C

_C/W

Unit

Vdc

Adc

Preferred devices are recommended choices for future use

and best overall value.

MJE200

MJE200G

MJE210

MJE210G

MJE210T

MJE210TG

COMPLEMENTARY SILICON

Device

POWER TRANSISTORS

25 VOLTS, 15 WATTS

ORDERING INFORMATION

2 1

JE2x0 = Device Code

MARKING DIAGRAM

5.0 AMPERES

http://onsemi.com

(Pb-Free)

= Year

= Work Week

= Pb-Free Package

Package

TO-225

x = 0 or 1

Publication Order Number:

JE2x0G

YWW

CASE 77

STYLE 1

TO-225

500 Units/Box

50 Units/Rail

Shipping

MJE200/D

Related parts for MJE210G

MJE210G Summary of contents

Page 1

... J stg MJE200 MJE200G Symbol Max Unit q _C/W 8. _C/W MJE210 83.4 JC MJE210G MJE210T MJE210TG Preferred devices are recommended choices for future use and best overall value. 1 http://onsemi.com 5.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 25 VOLTS, 15 WATTS TO-225 CASE 77 STYLE MARKING DIAGRAM ...

Page 2

ELECTRICAL CHARACTERISTICS Î Î Î Î Î ...

Page 3

MJE200 - NPN + 9.0 V ≤ DUTY CYCLE = 1.0% R and R VARIED TO OBTAIN DESIRED CURRENT LEVELS B C ...

Page 4

MJE200 - NPN, 10 7.0 1.0 ms 5.0 3.0 dc 5 150°C 1.0 J BONDING WIRE LIMITED 0.7 THERMALLY LIMITED @ T = 25°C 0.5 C (SINGLE PULSE) 0.3 SECOND BREAKDOWN LIMITED CURVES APPLY BELOW 0.2 ...

Page 5

MJE200 - NPN, NPN MJE200 400 T = 150°C J 25°C 200 - 55°C 100 1 2 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 COLLECTOR ...

Page 6

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada ...

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