MJE18006G ON Semiconductor, MJE18006G Datasheet
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MJE18006G
Specifications of MJE18006G
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MJE18006G Summary of contents
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... MJE18006G SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE18006G has an applications specific state−of−the−art die designed for use in 220 V line−operated SWITCHMODE Power supplies and electronic light ballasts. Features • Improved Efficiency Due to Low Base Drive Requirements: High and Flat DC Current Gain h ♦ ...
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ELECTRICAL CHARACTERISTICS Î Î Î Î Î ...
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TYPICAL STATIC CHARACTERISTICS 100 T = 125° 25° 20° 0.01 0 COLLECTOR CURRENT (AMPS) C Figure 1. DC Current Gain @ 1 Volt 25°C J ...
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TYPICAL SWITCHING CHARACTERISTICS 2000 B(off 300 1500 1000 500 ...
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140 120 100 25° 125° FORCED GAIN FE Figure 13. Inductive Fall Time GUARANTEED SAFE ...
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dyn dyn 90 TIME Figure 18. Dynamic Saturation Voltage Measurements ...
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... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...