2N5415 Fairchild Semiconductor, 2N5415 Datasheet
2N5415
Manufacturer Part Number
2N5415
Description
PNP 10W 200V 1A TRANSISTOR
Manufacturer
Fairchild Semiconductor
Datasheet
1.2N5415.pdf
(2 pages)
Specifications of 2N5415
Transistor Type
PNP
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
200V
Vce Saturation (max) @ Ib, Ic
2.5V @ 5mA, 50mA
Current - Collector Cutoff (max)
50µA
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 50mA, 10V
Power - Max
1W
Mounting Type
Through Hole
Package / Case
TO-39
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Frequency - Transition
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2N5415
Manufacturer:
MOT/ST
Quantity:
1 000
Part Number:
2N5415
Manufacturer:
MICROSEMI/美高森美
Quantity:
20 000
Company:
Part Number:
2N5415JANTX
Manufacturer:
Microsemi
Quantity:
1 400
© 1997 Fairchild Semiconductor Corporation
P
R
R
V
V
V
I
T
Symbol
Symbol
C
D
θJC
θJA
J
CEO
CBO
EBO
This device is designed for use as high voltage drivers requiring
collector currents to 100 mA. Sourced from Process 76. See
MPSA92 for characteristics.
Absolute Maximum Ratings*
, T
*
PNP High Voltage Amplifier
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
stg
Total Device Dissipation
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
Derate above 25°C
C
B
E
TN5415A
Characteristic
Parameter
TO-226
TA = 25°C unless otherwise noted
TA = 25°C unless otherwise noted
TN5415A
Discrete POWER & Signal
Max
125
1.0
8.0
50
-55 to +150
Value
200
200
100
4.0
Technologies
Units
mW/°C
Units
°C/W
°C/W
mA
°C
V
V
V
W
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2N5415 Summary of contents
Page 1
... Total Device Dissipation D Derate above 25°C R Thermal Resistance, Junction to Case θJC Thermal Resistance, Junction to Ambient R θJA © 1997 Fairchild Semiconductor Corporation TO-226 TA = 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted Discrete POWER & Signal Technologies Value Units 200 ...
Page 2
Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Breakdown Voltage* (BR)CEO V Collector-Base Breakdown Voltage (BR)CBO V Emitter-Base Breakdown Voltage (BR)EBO I Collector Cutoff Current CBO I Collector Cutoff Current CEX I Collector Cutoff Current CEO I Emitter Cutoff Current ...