2SA207700L Panasonic - SSG, 2SA207700L Datasheet

TRANS PNP -45VCEO -100MA MINI-3P

2SA207700L

Manufacturer Part Number
2SA207700L
Description
TRANS PNP -45VCEO -100MA MINI-3P
Manufacturer
Panasonic - SSG
Datasheets

Specifications of 2SA207700L

Transistor Type
PNP
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
500mV @ 10mA, 100mA
Current - Collector Cutoff (max)
100µA
Dc Current Gain (hfe) (min) @ Ic, Vce
160 @ 2mA, 10V
Power - Max
200mW
Frequency - Transition
80MHz
Mounting Type
Surface Mount
Package / Case
Mini3-G1 (SC-59)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
2SA207700LTR
Transistors
2SA2077
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC5845
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: August 2003
• High forward current transfer ratio h
• Mini type package, allowing downsizing of the equipment and
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
automatic insertion through the tape packing and the magazine
packing.
Parameter
Parameter
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
FE
T
V
I
P
CBO
I
T
V
V
V
CEO
EBO
a
CP
I
I
stg
C
CE(sat)
C
C
h
CBO
j
CEO
f
CBO
CEO
EBO
= 25°C
FE
T
ob
−55 to +150
Rating
I
I
I
V
V
V
I
V
V
−100
−200
C
C
E
C
−45
−45
200
150
CB
CE
CE
CB
CB
−7
= −10 µA, I
= −2 mA, I
= −10 µA, I
= −100 mA, I
SJC00301AED
= −10 V, I
= −10 V, I
= −20 V, I
= −10 V, I
= −10 V, I
Conditions
Unit
mW
B
mA
mA
°C
°C
E
C
V
V
V
B
C
E
E
E
= 0
= 0
= 0
B
= 0
= 0
= −2 mA
= 1 mA, f = 200 MHz
= 0, f = 1 MHz
= −10 mA
Marking Symbol: 7L
10˚
(0.95) (0.95)
1
2.90
1.9
+0.20
–0.05
±0.1
Min
−45
−45
160
0.40
−7
3
2
+0.10
–0.05
− 0.2
Typ
2.2
80
Mini3-G1 Package
− 0.1
−100
− 0.5
Max
460
0.16
EIAJ: SC-59
1: Base
2: Emitter
3: Collector
+0.10
–0.06
Unit: mm
MHz
Unit
µA
µA
pF
V
V
V
V
1

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