BSR18B Fairchild Semiconductor, BSR18B Datasheet
BSR18B
Manufacturer Part Number
BSR18B
Description
IC AMP PNP 40V 200MA SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.BSR18B.pdf
(4 pages)
Specifications of BSR18B
Transistor Type
PNP
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
110 @ 10mA, 1V
Power - Max
230mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSR18B
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2007 Fairchild Semiconductor Corporation
Rev. A
BSR18B
PNP General Purpose Amplifier
Absolute Maximum Ratings
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
*Device mounted on FR-4 PCB 1.6” X 1.6” X 0.06”.
V
V
V
I
T
P
R
Symbol
Symbol
C
J,
CBO
CEO
EBO
D
This device is designed as a general purpose amplifier and switch.
Sourced from Process 23.
θ JA
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Junction Temperature, Storage Temperature
Total Device Dissipation
Derate above 25℃
Thermal Resistance, Junction to Ambient
1. Base 2. Emitter 3. Collector
Characteristic
Parameter
3
* T
a
= 25°C unless otherwise noted
1
* T
SOT-23
a
= 25°C unless otherwise noted
2
1
Marking
T 9 3
-55 ~ +150
Value
Max
1.84
200
230
550
5.0
40
40
www.fairchildsemi.com
June 2007
Units
Units
mW/℃
℃/W
mW
mA
°C
V
V
V
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BSR18B Summary of contents
Page 1
... BSR18B PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch. Sourced from Process 23 Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Parameter V Collector-Base Voltage CBO V Collector-Emitter Voltage CEO V Emitter-Base Voltage EBO I Collector Current (DC Junction Temperature, Storage Temperature J, STG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired ...
Page 2
... Rise Time r t Storage Time s t Fall Time f * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors. Typical Performance Characteristics BSR18B Rev 25°C unless otherwise noted a Test Condition I = 1.0 mA μA, I ...
Page 3
... Typical Performance Characteristics (continued) BSR18B Rev www.fairchildsemi.com ...
Page 4
... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete BSR18B Rev. A OCX™ SILENT SWITCHER OCXPro™ SMART START™ ® OPTOLOGIC SPM™ OPTOPLANAR™ ...